Article

Allemand, Luc; Froment, M.; Maurin, G.; Souteyrand, Éliane

doi:10.1051/mmm:0199200305040100

Cited by 11 publications

(5 citation statements)

References 9 publications

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“…The (011) orientation of Ni layers electrodeposited on GaAs(001) had been reported previously [17,20]. Here we find a mixture of Ni(001) and Ni(011) with, considering the substantially larger rocking curve width for Ni(001), dominantly Ni(001).…”

Section: Structural Propertiessupporting

confidence: 83%

“…This was confirmed by in-plane XRD, where two preferred epitaxial growth relationships were observed. Figure 3 electrodeposited NiCu [17] and Cu [28] on GaAs(001). It should be noted that the Ni(001) orientation does not have any [111] in-plane direction; however, the (022) orientation does.…”

Section: Structural Propertiesmentioning

confidence: 99%

“…A promising route to overcome the problem of interface intermixing might be the use of a deposition technique wherein the atoms to be deposited reach the substrate with very low energy. Electrodeposition is of interest in this respect, as it is a room temperature process which-as shown previously [17][18][19][20]-can yield high quality epitaxial layers.…”

Section: Introductionmentioning

confidence: 99%

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Structure and magnetic properties of electrodeposited Ni films on n-GaAs(001)

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Evans

Schad

et al. 2002

J. Phys.: Condens. Matter

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We report the structural and magnetic properties of Ni films grown on GaAs(001) using electrodeposition, covering the thickness range 0–80 nm. The structure is characterized by mixed (001) and (011) epitaxial orientation of fcc Ni with a preference for the Ni(001) orientation. The magnetic anisotropy is originated by a combination of a crystalline contribution with fourfold symmetry and a uniaxial anisotropy probably caused by the asymmetry in the substrate surface structure. The saturation magnetic moment varies linearly with thickness, indicating limited intermixing between Ni film and GaAs substrate. This is ascribed to the low-energy deposition process characteristic of electrodeposition.

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Section: Structural Propertiessupporting

confidence: 83%

Section: Structural Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Structure and magnetic properties of electrodeposited Ni films on n-GaAs(001)

Scheck

Evans

Schad

et al. 2002

J. Phys.: Condens. Matter

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“…This result is in good agreement with reported literature using galvanostatic electrodeposition to grow Ni thin film on GaAs. [ 30–33 ]…”

Section: Resultsmentioning

confidence: 99%

“…This result is in good agreement with reported literature using galvanostatic electrodeposition to grow Ni thin film on GaAs. [30][31][32][33] It should be noted that, with Si substrates, the formation of a metallic deposit on Si results spontaneously in the formation of a thin oxide layer, [8] thus forming a MIS junction. At the GaAs substrate however, no such oxide is formed due to the dissolution of GaAs during the deposition of Ni.…”

Section: Self-limiting Electrodeposition Of Continuous Ni Thin Film Omentioning

confidence: 99%

Photoelectrochemistry of Self‐Limiting Electrodeposition of Ni Film onto GaAs

Ahmed

Zheng

et al. 2020

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Gallium arsenide (GaAs) provides a suitable bandgap (1.43 eV) for solar spectrum absorption and allows a larger photovoltage compared to silicon, suggesting great potential as a photoanode toward water splitting. Photocorrosion under water oxidation condition, however, leads to decomposition or the formation of an insulating oxide layer, which limits the photoelectrochemical performance and stability of GaAs. In this work, a self‐limiting electrodeposition method of Ni on GaAs is reported to either generate ultra‐thin continuous film or nanoislands with high particle density by controlling deposition time. The self‐limiting growth mechanism is validated by potential transients, X‐ray photoelectron spectroscopy composition and depth profile measurements. This deposition method exhibits a rapid nucleation, forms an initial metallic layer followed by a hydroxide/oxyhydroxide nanofilm on the GaAs surface and is independent of layer thickness versus deposition time when coalescence is reached. A photocurrent up to 8.9 mA cm−2 with a photovoltage of 0.11 V is obtained for continuous ultrathin films, while a photocurrent density of 9.2 mA cm−2 with a photovoltage of 0.50 V is reached for the discontinuous nanoislands layers in an aqueous solution containing the reversible redox couple K3Fe(CN)6/K4Fe(CN)6.

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Electrochemical Phase Formation and Growth

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Article

Abstract: Introduction.

Cited by 11 publications

References 9 publications

Structure and magnetic properties of electrodeposited Ni films on n-GaAs(001)

Structure and magnetic properties of electrodeposited Ni films on n-GaAs(001)

Photoelectrochemistry of Self‐Limiting Electrodeposition of Ni Film onto GaAs

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