Artificially size- and position-controlled Ge dot formation using patterned Si

Suda, Yoshiyuki; Kaechi, Shuya; Kitayama, Daisuke; Yoshizawa, T.

doi:10.1016/j.tsf.2004.06.028

Cited by 7 publications

(4 citation statements)

References 5 publications

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“…The base areas of these nano-islands are on the (100) plane, indicating that they nucleate on the (100) plane and grow to contact with the V-groove. In comparison, Ge nano-islands preferentially grow on top of the V-grooves between two {111} family planes (figure 5) [17,8,9].…”

Section: Ge Nano-islands On the {111} Planesmentioning

confidence: 99%

“…The preferred nucleation can account in part for the depletion of Ge adatoms around the nearby {111} facets, assuming that the V-groove does not impose significant diffusion barrier. Additionally, the existence of the adatom sink on the V-groove and in the pits can lead to island depletion on the (100) surface [8]. However, a separate driving force is required for depleting Ge adatoms on the {111} facet near its convex edge, a location that lacks a good sink nearby.…”

Section: Ge Nano-islands On the {111} Planesmentioning

confidence: 99%

“…Few works have discussed the growth of nano-islands on the nanosized {111} plane. Using tetramethyl ammonium hydroxide (TMAH) solution to fabricate V-groove patterns in the Si(100) substrate with large {111} side walls, Suda et al observed that deposited Ge adatoms migrate from the surrounding (100) surface to the bottom of the V-groove or pits and form nano-islands at growth temperatures exceeding 750 K [8]. Olzierski et al used TMAH to build nanometre-scale V-grooves with {111} walls on oxidized Si(100) substrate [9].…”

Section: Introductionmentioning

confidence: 99%

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Growth behaviour of Ge nano-islands on the nanosized Si{111} facets bordering on two {100} planes

Ferng¹,

Yang²,

Luo³

et al. 2006

Nanotechnology

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Si(100) substrates were used to fabricate various nanosized {111} facets between the (100) planes using photolithography and anisotropic wet chemical etching. Following simultaneous Ge chemical vapour deposition on the neighbouring (100) and {111} facets, the Ge nano-island formation and distribution was observed on both the (100) terraces and the {111} side walls using a dynamical atomic force microscope. The nano-island formation on the nanosized {111} strip facets was found to be strongly suppressed upon reducing the strip width due primarily to the interaction of adatoms on the neighbouring facets. Specifically, the difference in the effective chemical potential of Ge adatoms on the two neighbouring facets leads to the depletion of nano-islands on the {111} strip with width <500 nm under the growth condition used in this study.

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Section: Ge Nano-islands On the {111} Planesmentioning

confidence: 99%

Section: Ge Nano-islands On the {111} Planesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Growth behaviour of Ge nano-islands on the nanosized Si{111} facets bordering on two {100} planes

Ferng¹,

Yang²,

Luo³

et al. 2006

Nanotechnology

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show abstract

“…Alternatively, self-assembly is of significant interest to both academic research and industrial applications due to the potential of getting ordered nanostructures at ultra-scaled regime. Both experimental and theoretical efforts have been invested extensively into study of growth of group III-V and group IV quantum dots (QDs) or islands on singlecrystalline substrates, [1][2][3][4][5] aiming at exploring predictable and well-controlled QD growth with supreme spatial uniformity and understanding the underlying physical mechanism. Perfect self-alignment of Ge QDs on Si ridge, [6][7][8][9][10] SiGe QDs on lithographically patterned Si substrate, 11 and InAs QDs on GaAs plateau 12,13 were reported by many groups, and different models were built to address the directed nucleation effect of strained islands.…”

mentioning

confidence: 99%

Strain-less directed self-assembly of Si nanocrystals on patterned SiO2 substrate

Ren

Liu

et al. 2012

Journal of Applied Physics

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Strain induced self-assembled Stranski-Krastanov growth of semiconductor islands on patterned substrate has shown great improvement of island size uniformity and spatial order. Here, we show self-assembled Volmer-Weber (V-W) growth of Si nanocrystals (NCs) on patterned SiO 2 substrate via traditional chemical vapor deposition method under certain experimental configurations, induced by surface/interface energy competition without strain. A simplified two-dimensional theoretical model is developed to elucidate V-W island nucleation on the pattern substrate with varied morphologies, which shows good consistency with the experimental results. Our studies provide a general guidance for directing the growth and self-assembly of NCs on non-planar oxide substrates. V C 2012 American Institute of Physics. [http://dx.

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Order and disorder in the heteroepitaxy of semiconductor nanostructures

Ratto¹,

Rosei²

2010

Materials Science and Engineering: R: Reports

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Artificially size- and position-controlled Ge dot formation using patterned Si

Cited by 7 publications

References 5 publications

Growth behaviour of Ge nano-islands on the nanosized Si{111} facets bordering on two {100} planes

Growth behaviour of Ge nano-islands on the nanosized Si{111} facets bordering on two {100} planes

Strain-less directed self-assembly of Si nanocrystals on patterned SiO2 substrate

Order and disorder in the heteroepitaxy of semiconductor nanostructures

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