Order and disorder in the heteroepitaxy of semiconductor nanostructures

Ratto, Fulvio; Rosei, Federico

doi:10.1016/j.mser.2010.06.011

Cited by 28 publications

(26 citation statements)

References 244 publications

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“…36 Considering the truth that no flat wetting layer of strontianite could form on calcite substrate since the calcite substrate dissolution continues while the strontianite micropillars epitaxially grow on calcite substrate, the Volmer−Weber mode may be more appropriate for the heteroepitaxial growth of Ca-doped strontianite micropillars on calcite substrate.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Ca-Doped Strontianite–Calcite Hybrid Micropillar Arrays Formed via Oriented Dissolution and Heteroepitaxial Growth on Calcite

Xing

et al. 2015

Crystal Growth & Design

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Even though heteroepitaxial growth of one-dimensional microstructures or three-dimensional islands has been realized via strategies such as chemical vapor deposition, molecular beam epitaxy, and solution phase, researchers have not succeeded in the formation of one-dimensional hybrid microstructures via the combination of heteroepitaxial growth and oriented dissolution up to now. In this work, well ordered single crystalline calcium-doped strontianite−calcite hybrid micropillar arrays with the long axis along the [001] direction of the two phases were formed on calcite (104) substrates via heteroepitaxial growth of strontianite and oriented dissolution of calcite in aqueous solution for the first time. Energydispersive spectroscopy analysis shows that the micropillars are composed of strontianite occluded with about 12 mol % of Ca. During the growth process of strontianite, calcite cores formed in the inner side of the strontianite micropillars at the base stage via the oriented dissolution. The lattices of the strontianite and calcite match very well at the interface of calcite and strontianite. A novel formation mechanism is proposed for the formation of Ca-doped strontianite−calcite hybrid micropillars via the synergetic process of the oriented dissolution of one carbonate mineral and the heteroepitaxial growth of another carbonate mineral in Volmer−Weber growth mode with a small lattice misfit. Ca-doped strontianite micropillar arrays might grow epitaxially on the calcite (001) and (104) planes with small misfits.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Ca-Doped Strontianite–Calcite Hybrid Micropillar Arrays Formed via Oriented Dissolution and Heteroepitaxial Growth on Calcite

Xing

et al. 2015

Crystal Growth & Design

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“…This intermixing phenomenon is observed in numerous complex metastable alloys or solid solutions obtained by sequential PLD 15,16 and in semiconductors such as Germanium/Silicon systems. [17][18][19][20][21] This inter- mixing phenomena (between iron and chromium at the interface) might lead to the formation of Bi 2 FeCrO 6 active layer, but there is no conclusive experimental evidence of this new phase formation that can be shown here.…”

Section: Resultsmentioning

confidence: 99%

Photovoltaic Properties of Multiferroic BiFeO₃/BiCrO₃ Heterostructures

Chakrabartty

Nechache

et al. 2014

J. Am. Ceram. Soc.

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We report a power conversion efficiency of ~0.01% in multistacking of BiFeO3/BiCrO3 bilayer thin films used as active layers in a photovoltaic (PV) device. The films were epitaxially deposited by pulse laser deposition onto (100) oriented CaRuO3‐coated LaAlO3 substrates and were subsequently illuminated with 1 sun (AM 1.5). The fill factor is determined to be 0.31%, a remarkable value for ferroelectric‐ and multiferroic‐based PV devices. Our results demonstrate that photocurrent density and photovoltage can be tuned by varying the thickness and number of respective bilayers in the improvement of PV properties of multiferroic heterostructures. The maximum photocurrent is generated at an optimal multilayer thickness of 60 nm, with its origin being mainly ascribed to the contribution of ferroelectric polarization.

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“…The formation of three-dimensional (3D) nanostructures in the Stranski-Krastanov growth of group IV semiconductors is one of the fascinating and complex phenomena related to heteroepitaxy [1][2][3][4]. Among the low-index surfaces of Si, the epitaxy of Ge on the Si(111) exhibits a relatively simple behavior consistent with classical nucleation theory.…”

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confidence: 79%

Hug-like island growth of Ge on strained vicinal Si(111) surfaces

Persichetti

Menditto

Sgarlata

et al. 2011

Applied Physics Letters

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We examine the structure and the evolution of Ge islands epitaxially grown on vicinal Si(111) surfaces by scanning tunneling microscopy. Contrary to what is observed on the singular surface, three-dimensional Ge nanoislands form directly through the elastic relaxation of step-edge protrusions during the unstable step-flow growth. As the substrate misorientation is increased, the islands undergo a shape transformation which is driven by surface energy minimization and controlled by the miscut angle. Using finite element simulations, we show that the dynamics of islanding observed in the experiment results from the anisotropy of the strain relaxation.Comment: 4 figure

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Order and disorder in the heteroepitaxy of semiconductor nanostructures

Cited by 28 publications

References 244 publications

Ca-Doped Strontianite–Calcite Hybrid Micropillar Arrays Formed via Oriented Dissolution and Heteroepitaxial Growth on Calcite

Ca-Doped Strontianite–Calcite Hybrid Micropillar Arrays Formed via Oriented Dissolution and Heteroepitaxial Growth on Calcite

Photovoltaic Properties of Multiferroic BiFeO₃/BiCrO₃ Heterostructures

Hug-like island growth of Ge on strained vicinal Si(111) surfaces

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Order and disorder in the heteroepitaxy of semiconductor nanostructures

Cited by 28 publications

References 244 publications

Ca-Doped Strontianite–Calcite Hybrid Micropillar Arrays Formed via Oriented Dissolution and Heteroepitaxial Growth on Calcite

Ca-Doped Strontianite–Calcite Hybrid Micropillar Arrays Formed via Oriented Dissolution and Heteroepitaxial Growth on Calcite

Photovoltaic Properties of Multiferroic BiFeO3/BiCrO3 Heterostructures

Hug-like island growth of Ge on strained vicinal Si(111) surfaces

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Photovoltaic Properties of Multiferroic BiFeO₃/BiCrO₃ Heterostructures