Assembly and Packaging Technologies for High-Temperature and High-Power GaN Devices

Bajwa, Adeel; Qin, Yangyang; Reiner, Richard; Quay, R.; Wilde, Jürgen

doi:10.1109/tcpmt.2015.2468595

Cited by 64 publications

(15 citation statements)

References 34 publications

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“…The thermal conductivity of the TLP bonded layer was calculated relative to the value shown in Table 8. The detailed description of the method can be found in our earlier works [11,27]. The measurements were made on 10 samples for each die-attachment.…”

Section: Thermal Characterization Of Sic Assembliesmentioning

confidence: 99%

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Reliability modeling of Sn–Ag transient liquid phase die-bonds for high-power SiC devices

Bajwa

Wilde

2016

Microelectronics Reliability

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Section: Thermal Characterization Of Sic Assembliesmentioning

confidence: 99%

“…This method offers advantages such as low bonding temperatures, flux free joining and void free interfaces [9]. The literature reports on various binary systems based on Ag-Sn, Ag-In, Au-Sn, Au-In, and Cu-Sn [10,11]. In the next section, the advantages and limitations of the currently used TLP systems will be explored.…”

Section: Introductionmentioning

confidence: 99%

Reliability modeling of Sn–Ag transient liquid phase die-bonds for high-power SiC devices

Bajwa

Wilde

2016

Microelectronics Reliability

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“…The possibility of growth of HEMT structures on cheap, widely available large diameter silicon substrates is the reason why GaN-on-Si GaN-on-Si structures are most often used for the fabrication of final power devices (Germain et al , 2010; Hilt et al , 2015; Perkins et al , 2017; Reiner et al , 2018; Zhang et al , 2017; Noh et al , 2018). One of the main challenges faced by GaN-on-Si HEMTs technology is effective dissipation of heat generated from the device active region under wide range of working conditions, including surge operation transients (Bajwa et al , 2015; Cheng and Chou, 2013; Nigam et al , 2017). In this context, it is particularly important to develop new assembly methods ensuring appropriate thermal and thermo-mechanical properties of the joints.…”

Section: Introductionmentioning

confidence: 99%

“…Suitably formed joints should decrease the junction temperature, minimize self-heating effects and extend the lifetime and reliability of the power devices. In this way, developed assembly methods could improve GaN-on-Si HEMTs performance (Bajwa et al , 2015; Cheng and Chou, 2013; Liu et al , 2011).…”

Section: Introductionmentioning

confidence: 99%

Development of assembly techniques for connection of AlGaN/GaN/Si chips to DBC substrate

Kisiel

Guziewicz

Taube

et al. 2020

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Purpose This paper aims to investigate the sintering and solid liquid interdiffusion bonding (SLID) techniques to attach AlGaN/GaN-on-Si chips to direct bond copper (DBC) substrate. The influence of metal layers deposited on the backside of AlGaN/GaN-on-Si dies on the assembly process is also investigated. Design/methodology/approach The authors assumed the value of the shear strength to be a basic parameter for evaluation of mechanical properties. Additionally, the surface condition after shearing was assessed by SEM photographs and the shear surface was studied by X-ray diffraction method. The SLID requires Sn-plated DBC substrate and can be carried out at temperature slightly higher than 250°C and pressure reduced to 4 MPa, while the sintering requires process temperature of 350°C and the pressure at least 7.5 MPa. Findings Ag-, Au-backside covered high electron mobility transistor (HEMT) chips can be assembled on Sn-plated DBC substrates by SLID technology. In case of sintering technology, Cu- or Ag-backside covered HEMT chips can be assembled on Ag- or Ni/Au-plated DBC substrates. The SLID process can be realized at lower temperature and decreased pressure than sintering process. Research limitations/implications For SLID technology, the adhesion between Cu-backside covered HEMT die and DBC with Sn layer loses its operational properties after short-term ageing in air at temperature of 300°C. Originality/value In the SLID process, Sn-Cu and Sn-Ag intermetallic compounds and alloys are responsible for creation of the joint between Sn-plated DBC and micropowder Ag layer, while the sintered joint between the chip and Ag-based micropowder is formed in diffusion process.

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“…To satisfy demands for high energy efficiency and reliability in extreme environments, wide band-gap (WBG) semiconductor materials including silicon carbide (SiC) and gallium nitride (GaN) have been adopted in power electronic systems [1,2]. It is understood that the power electronics can be significantly improved by using WBG semiconductors, due to the expectation of increasing power density, operating frequency, and break-down voltage.…”

Section: Introductionmentioning

confidence: 99%

Heat-Resistant Microporous Ag Die-Attach Structure for Wide Band-Gap Power Semiconductors

2018

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In this work, efforts were made to prepare a thermostable die-attach structure which includes stable sintered microporous Ag and multi-layer surface metallization. Silicon carbide particles (SiCp) were added into the Ag sinter joining paste to improve the high-temperature reliability of the sintered Ag joints. The use of SiCp in the bonding structures prevented the morphological evolution of the microporous structure and maintained a stable structure after high temperature storage (HTS) tests, which reduces the risk of void formation and metallization dewetting. In addition to the Ag paste, on the side of direct bonded copper (DBC) substrates, the thermal reliability of various surface metallizations such as Ni, Ti, and Pt were also evaluated by cross-section morphology and on-resistance tests. The results indicated that Ti and Pt diffusion barrier layers played a key role in preventing interfacial degradations between sintered Ag and Cu at high temperatures. At the same time, a Ni barrier layer showed a relatively weak barrier effect due to the generation of a thin Ni oxide layer at the interface with a Ag plating layer. The changes of on-resistance indicated that Pt metallization has relatively better electrical properties compared to that of Ti and Ni. Ag metallization, which lacks barrier capability, showed severe growth in an oxide layer between Ag and Cu, however, the on-resistance showed fewer changes.

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Assembly and Packaging Technologies for High-Temperature and High-Power GaN Devices

Cited by 64 publications

References 34 publications

Reliability modeling of Sn–Ag transient liquid phase die-bonds for high-power SiC devices

Reliability modeling of Sn–Ag transient liquid phase die-bonds for high-power SiC devices

Development of assembly techniques for connection of AlGaN/GaN/Si chips to DBC substrate

Heat-Resistant Microporous Ag Die-Attach Structure for Wide Band-Gap Power Semiconductors

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