2019
DOI: 10.1116/1.5125662
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Assessing stability of metal tellurides as alternative photomask materials for extreme ultraviolet lithography

Abstract: Tellurium (Te) is one of the elements with highest extinction coefficient κ at the 13.5 nm extreme-ultraviolet (EUV) wavelength. It is being considered as an alternative absorber material for binary photomask in EUV lithography. The absorber material is required to remain chemically stable during EUV exposure, at elevated temperatures up to 150°C, during mask cleaning, and in the low hydrogen pressure environment that is present in the EUV scanner. However, Te is known to react with oxygen and hydrogen, formin… Show more

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Cited by 13 publications
(12 citation statements)
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“…They consist of a highly reflective multilayer substrate of alternating layers of silicon and molybdenum and an absorber layer on top [41,42,43]. Compound materials such as TaBN, Ni 3 Al [1], RuTa [4], PtMo, or TaTeN [2,3] are currently at the focus of interest for novel absorber materials. Photomasks create a pattern at the wafer based on different physical principles: if most parts of the incoming radiation are absorbed, it is called a 'binary mask'.…”
Section: Application In Euv Lithographymentioning
confidence: 99%
See 1 more Smart Citation
“…They consist of a highly reflective multilayer substrate of alternating layers of silicon and molybdenum and an absorber layer on top [41,42,43]. Compound materials such as TaBN, Ni 3 Al [1], RuTa [4], PtMo, or TaTeN [2,3] are currently at the focus of interest for novel absorber materials. Photomasks create a pattern at the wafer based on different physical principles: if most parts of the incoming radiation are absorbed, it is called a 'binary mask'.…”
Section: Application In Euv Lithographymentioning
confidence: 99%
“…The complexity of functional nano-structures is constantly increasing in the semiconductor industry, and a key enabler for upcoming technologies beyond the 10 nm semiconductor node is new materials. Specifically, metals such as Pt, Te, Mo, Ru start to play a central role as absorber materials in photo lithography, for capping layers or as a means of thermal or electric contacts [1,2,3,4]. Their alloys are used to tune the material's properties to the desired values and therefore must be studied beforehand, which highlights the need for a precise and reliable determination of the physical constants of those thin film materials.…”
Section: Introductionmentioning
confidence: 99%
“…As stated earlier, EUV photomasks are rarely subjected to temperatures beyond 150°C to avoid Mo/Si ML mirror degradation. 15 In a real case scenario, a 3 nm of Ru capping layer is expected to act as a barrier between the absorber and the Mo/Si ML mirror. Thus, Ta or Co silicide formation is insignificant for the intended application.…”
Section: Is-xrd and Temperature Stabilitymentioning
confidence: 99%
“…13,14 Refraining from temperatures above 150°C is suggested for EUV photomasks to prevent Mo/Si ML mirror damage. 15 In the literature, we come across organic chemical vapor etch of Co using energetic noble gas atoms under low temperatures. 16 In this study, we explore etch of TaCo alloys along with prospective hard mask materials, such as SiO 2 and Si 3 N 4 .…”
Section: Introductionmentioning
confidence: 99%
“…Instead of a sharp peak, the broad nature of the peak observed at 500°C makes it difficult to distinguish the formation of either Ta silicide or Ta oxide in the given range of temperature. EUV photomasks are rarely subjected to temperatures beyond 150°C to avoid Mo/Si ML mirror degradation [37]. In a real case scenario, a 3 nm of Ru capping layer is expected to act as a barrier between the absorber and the Mo/Si ML mirror.…”
Section: Ldp Fqpmentioning
confidence: 99%