Assessment of dielectric charging in capacitive MEMS switches fabricated on Si substrate with thin oxide film

Birmpiliotis, D.; Czarnecki, P.; Koutsoureli, M.; Papaioannou, G.; Wolf, Ingrid De

doi:10.1016/j.mee.2016.04.008

Cited by 5 publications

(1 citation statement)

References 21 publications

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“…For all cases, our results present an asymmetric electrical behavior with respect to the applied bias polarity. In order to confirm that this asymmetry does not arise by any substrate induced effect (the substrate Metal-Oxide-Semiconductor (MOS) formed capacitor has been reported to affect Capacitance-Voltage (C-V) measurements [25] along with the interface states that induce losses on RF performance [26]), preliminary measurements performed with the substrate both floating and grounded revealed absolutely any differences. This is because in our case we perform DC current-voltage (I-V) measurements on a vertical stack with respect to a grounded bottom electrode formed atop the high quality thermal oxide.…”

Section: Resultsmentioning

confidence: 99%

Interface Asymmetry Induced by Symmetric Electrodes on Metal–Al:TiO$_{x}$–Metal Structures

Michalas

Trapatseli

Stathopoulos

et al. 2018

IEEE Trans. Nanotechnology

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Emerging memory technologies have sparked great interest in studying a variety of materials that can be employed in metal-insulator-metal topologies to support resistive switching. While the majority of reports focus on identifying appropriate materials that can be used as active core layers, the selection of electrodes also impacts the performance of such memory devices. Here, both the top and the bottom interfaces of symmetric Metal-Al:TiO x -Metal structures have been investigated by the analysis of their current versus voltage characteristics in the temperature range of 300-350 K. Three different metals were utilized as electrodes, Nb, Au, and Pt, for covering a wide range of work function and electronegativity values. Despite their symmetric structure, the devices were found to exhibit asymmetric performance with respect to the applied bias polarity. Clear signature plots indicating thermionic emission over the interface Schottky barriers have been obtained. The asymmetry between the top and the bottom interfaces was further evaluated by the values of the potential barrier heights and by the barrier lowering factors, both calculated from the experimental data. This study highlights the importance of the interface effects and proves that in addition to film doping, proper (top/bottom) metal selection, and interface engineering should also be exploited for developing thin film metal oxide based devices with tailored electrical characteristics.

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Section: Resultsmentioning

confidence: 99%