Assessment of Fe-doped semi-insulating InP crystals by scanning photoluminescence measurements

Longère, J.Y.; Schohe, K.; Krawczyk, Stanisław; Coquillé, R.; L'Haridon, H.; Favennec, P.N.

doi:10.1063/1.346780

Cited by 31 publications

(8 citation statements)

References 17 publications

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“…Several sharp PL peaks are also seen on the mapping. The presence of sharp peaks relates to the gettering of iron at dislocations, which would locally lead to the reduction of Fe concentration [10,11]. It should be noted that a characteristic growthstriation pattern, attributed to fluctuations of Fe concentration during InP crystal growth [12,16], is not directly observed.…”

Section: Resultsmentioning

confidence: 99%

“…Compared with wet chemical etching, transmission electron microscopy (TEM), x-ray topography, resistivity measurements and secondary ion mass spectroscopy, etc, the photoluminescence (PL) mapping technique provides a kind of quantitative, non-destructive and wafer-scale evaluation method for measuring the quality and homogeneity of SI InP wafers. Using this technique, for instance, Erman et al [10] and Longère et al [11] have studied as-grown Fe-doped SI InP with an optical resolution ranging from 1 µm to several hundred micrometres. Hirt et al [12] have studied both as-grown Fe-doped IS InP and annealed SI InP obtained by thermal treatment under pure phosphorus (P-annealed) ambience with high-resolution scanning photoluminescence measurements [12].…”

Section: Introductionmentioning

confidence: 99%

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Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour

Dong¹,

Zhao²,

Lu³

et al. 2002

Semicond. Sci. Technol.

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We have investigated the photoluminescence mapping characteristics of semi-insulating (SI) InP wafers obtained by annealing in iron phosphide ambience (FeP 2 -annealed). Compared with as-grown Fe-doped and undoped SI InP wafers prepared by annealing in pure phosphorus vapour (P-annealed), the FeP 2 -annealed SI InP wafer has been found to exhibit a better photoluminescence uniformity. Radial Hall measurements also show that there is a better resistivity uniformity on the FeP 2 -annealed SI InP wafer. When comparing the distribution of deep levels between the annealed wafers measured by optical transient current spectroscopy, we find that the incorporation of iron atoms into the SI InP suppresses the formation of a few defects. The correlation observed in this study implies that annealing in iron phosphorus ambience makes Fe atoms diffuse uniformly and occupy the indium site in the SI InP lattice. As it stands, we believe that annealing undoped conductive InP in iron phosphide vapour is an effective means to obtain semi-insulating InP wafers with superior uniformity.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour

Dong¹,

Zhao²,

Lu³

et al. 2002

Semicond. Sci. Technol.

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“…The efficiency of the band to band luminescence emission is governed by the mmority carrier lifetime, which is controlled in semi-insulating InP by recombination at iron levels. It is well known that the intensity of the band to band luminescence is inversely proportional to the electrically active iron concentration [7]. Therefore, in a first approximation the fluctuations of the luminescence intensity reflect the distribution of the electrically active iron.…”

Section: Wafer Uniformitymentioning

confidence: 99%

“…Studies about the homogeneity of semi-insulating InP have been carried out by resistivity [21], infrared transmission [SI and PL [7]. Resistivity and IR mapping give a comprehensive view of the whole wafer uniformity, however, they do not resolve microscopic inhomogeneities, since the probe size is at best tenths of pms.…”

Section: Wafer Uniformitymentioning

confidence: 99%

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Improvement of uniformity and electrical properties of Fe-doped InP by wafer annealing

Jiménez¹,

Avella²,

Puente³

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SI

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Thermal treatments are crucial steps for improving the quality of semi-insulating InP substrates. The result of these treatments depends on the starting material and the specific annealing conditions. The best results in terms of the electrical properties and homogeneity are obtained by annealing Fe-doped InP wafers. The influence of the specific annealing conditions is discussed. The best results are obtained for long annealing times (50 hours) and slow cooling rates, which give good homogeneity, high carrier mobility and high enough electrical compensation. A. IntroductionSemi-insulating InP is a basic material for high speed electronics and OEIC's (Optoelectronic Integrated Circuits) for fibre optic communication systems. The growth and preparation of substrates with precise requirements is a crucial step in the development of these technologies. Among the major requirements of these substrates are high resistivity, high mobility and whole wafer uniform properties [l]. Commercially available LEC (Liquid Encapsulated Czochralski) substrates are prepared by adding iron to the polycrystalline charge [1,2]. Iron enters the In site in the InP lattice giving a midgap acceptor (Ea=0.64 ev) [3], that compensates the residual shallow donors. However, the presence of iron raises several challenging problems. These problems are normally related to its small distribution coefficient (< 0.001) [l], its high diffusivity [4] and its incomplete electrical activation [1,4]. The consequence of the low segregation coefficient is a pronounced axial distribution profile [5]. The low electrical activation demands that high amounts of iron be added to the charge, above that strictly necessary for compensating the shallow donors. The high diffusivity together with the high doping amounts are responsible for the iron contamination of the epilayers grown on these substrates [6], which is detrimental for the device performance.From the point of view of the radial uniformity the problems are not smaller, since typical macroscopic and microscopic lateral fluctuations appear. Doping growth striations are commonly observed [7,8]. These inhomogeneities arise from non convective transport in the melt, the curvature of the growth interfaces and other growth features.In addition to these macroscopic and mesoscopic non uniformities, a number of microdefects are present, e.g. grown-in dislocations, microprecipitates and grain boundaries [9]. These microdefects play an important role in the properties of the substrates and in the thermal treatments as we will see later [lo-121. Following these considerations, a great effort is necessary in order to improve the quality of the wafers actually available. As it was shown for other substrates, e.g.GaAs [13], adequate thermal treatments seem to be the best way for achieving advances in the optimization of the semi-insulating InP substrates. Strong research has been carried out in the last years about thermal treatments to obtain high quality semi-insulating InF' substrates. In spite of this, there is ...

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Growth of Semiconductor Materials

Pizzini¹

2015

Physical Chemistry of Semiconductor Materials and Processes

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Assessment of Fe-doped semi-insulating InP crystals by scanning photoluminescence measurements

Cited by 31 publications

References 17 publications

Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour

Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour

Improvement of uniformity and electrical properties of Fe-doped InP by wafer annealing

Growth of Semiconductor Materials

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