Room-temperature scanning photoluminescence (SPL) measurements were performed on Fe-doped semi-insulating InP wafers obtained from various suppliers. It was found that defects and inhomogeneities such as short- and long-range doping striations, dislocations, and subsurface extended defects are associated with specific ‘‘signatures’’ in SPL images, regardless of the origin of the samples. Because SPL measurements are fast and nondestructive, they appear to be useful for the evaluation of this material.

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Room temperature scanning photoluminescence (SPL) measurements were performed on n-type (Sn-doped, S-doped and undoped) InP crystals provided by various suppliers. It was found that defects and non-uniformities such as doping striations, dislocations and subsurface defects are associated with specific 'signatures' in SPL images, regardless of the type of doping and the origin of the samples. SPL measurements appear to be useful for routine inspection of this material because they are fast and non-destructive.

No abstract