Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo

Abstract

Abstract-The inclusion in advanced device simulators of quantum effects different than standard confinement becomes mandatory to describe device behavior as technology approaches the nanometer scales. This work presents a model to include the gate leakage mechanism considering direct and trap assisted tunneling in Multi-Subband Ensemble Monte Carlo (MS-EMC) simulators. The tool is used for the study of FDSOI and FinFET devices.

MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections

“…Our simulation frame will only consider ballistic transport and S/D tunneling considering two approaches: ballistic tunneling (BT) where particles are drifted inside the barrier region as previously described [9] and instantaneous tunneling (IT), a simpler model which does not consider the transport inside the barrier with two implications: the tunneling time is zero and no charge is considered under the barrier affecting to the self consistent solution of Poisson equation. The differences between the models are clearly presented in Figure 3.…”

“…The additional modules needed for taking into account the tunneling are included as separated transport mechanisms and can be activated or not depending on the simulation scenario. S/D tunneling [8] and gate tunneling [9] are implemented as stochastic mechanisms evaluated for each superparticle at the end of Monte Carlo free flight. Band-to-Band tunneling can be also considered as described in [10].…”

Impact of Strain on S/D tunneling in FinFETs: a MS-EMC study

“…On the other side, the additional modules needed for taking into account the quantum effects are included as separated transport mechanisms without increasing the computational time, which is a noteworthy advantage of our code in comparison to purely quantum transport simulations. In addition to the S/D tunneling [9], others tunneling mechanisms such as band-toband tunneling (BTBT) [10] and gate leakage mechanisms (GLM) [11] have been also incorporated in this MS-EMC tool. They can be activated or not depending on the simulation scenario, making possible their individual or simultaneous simulation [12].…”

Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices

“…Second, the GLM model has been implemented including DT and both elastic TAT and inelastic TAT [15], [16]. The GLM treatment inside the simulator can be divided into two stages, as is shown in Fig.…”