Assessment of quantum dot infrared photodetectors for high temperature operation

Martyniuk, Piotr; Krishna, S.; Rogalski, Antoni

doi:10.1063/1.2968128

Cited by 48 publications

(25 citation statements)

References 29 publications

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“…The values of the calculations are taken from various references as depicted in Tables 3.1-3.2 [24][25][26][27][28][29][30][31]. n r =3.5-5 τ 0 =10ps L cav =900 sE cv =1eV τ wr =3ns τs=15ps R 1 , R 2 =30%,-90% τ r =2.8ns Α=6cm -1 τ p =8.8ps R=8ns E g =0.8eV Table 3.2 QDIP parameters.…”

Section: Resultsmentioning

confidence: 99%

Block Diagram Programming of Quantum Dot Sources and Infrared Photodetectors for Gamma Radiation Detection Through VisSim

El_Tokhy¹,

Mahmoud²,

Konber³

2012

State-of-the-Art of Quantum Dot System Fabrications

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Section: Resultsmentioning

confidence: 99%

Block Diagram Programming of Quantum Dot Sources and Infrared Photodetectors for Gamma Radiation Detection Through VisSim

El_Tokhy¹,

Mahmoud²,

Konber³

2012

State-of-the-Art of Quantum Dot System Fabrications

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“…[15] Phillips and Martyniuk et al [26,27] further developed models of QDIP performance and showed that QDIPs have the potential for excellent IR detector performance. The interest in QDIPs comes primarily from their predicted ability to achieve high performance at high operating temperatures (near room temperature).…”

Section: Benefits Of Quantum Dots For Intersubband Detectorsmentioning

confidence: 99%

Quantum Dots

and

Razeghi

2015

Photonics

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INTRODUCTIONThe strong interest in low dimensional semiconductor structures originates from their exciting electronic properties, which can have an important impact on the performance of electronic and photonic devices. The quantum dots (QDs), also known as quantum boxes, are nanometer scale islands in which electrons and holes are confined in threedimensional (3D) potential boxes. They are expected to show a zero-dimensional (0D), -function density of states and are able to quantize an electron's free motion by trapping it in a quasi-0D potential confinement. As a result of the strong confinement imposed in all three spatial dimensions, quantum dots are similar to atoms. They are frequently referred to as "artificial atoms." Due to this confinement, novel physical properties will emerge, which can lead to new semiconductor devices as well as drastically improved device performance.As the particles are confined in all three dimensions, there is no dispersion curve and the density of states is just dependent on the number of confined levels. For one single dot, only two (spin-degenerate) states exit at each energy level and the plot of the density of states versus energy will be a series of -functions. Figure 6.1 shows the change of the density states from a bulk system to the low dimensional systems of quantum wells (QWL), quantum wires (QWR), and QDs. The calculation of these density of states can be found in an introductory solid state text [1].In QDs, the width of the electron energy distribution is zero in an ideal case. This means that electrons in those structures are distributed in certain discrete energyFIGURE 6.1 Density of state of zero-dimensional (upper left), one-dimensional (upper right), two-dimensional (lower left), and bulk (lower right) systems.levels, and the energy distribution width is fundamentally independent of temperature.In real semiconductor structures, due to many interaction processes such as electronelectron and electron-phonon scattering (which can also be reduced by QDs due to the lack of phonons to satisfy the energy conservation, which is the so-called phonon bottleneck [2]), a certain width in the electron energy distribution exists. However it is expected to be much smaller compared to bulk and QW systems. The condition for novel and interesting electronic properties to occur in a QDbased device is that the lateral size of the QD should be smaller than the coherence length and the elastic scattering length of the carriers. Additional quantum-size effects require the structural features to be reduced to the range of the de Broglie wavelength. The advantages in operation depend not only on the absolute size of the nanostructures in the active region, but also on the uniformity of size and shape. A large distribution of sizes would "smear" the density of states of QDs thus making it more like that of bulk material. Therefore, the repeatable fabrication of these nanometer 3D quantum structures requires methods with atomic scale accuracy, which presents a major challenge for current...

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“…A further reduction of the systems dimensionality should in principle reduce the thermionic emission and in contrast to QWIPs absorption of normal incident light is inherently allowed [3]. The first intersubband quantum dot infrared photodetector (QDIP) was demonstrated nearly 15 years ago by Pan et al [4].…”

Section: Introductionmentioning

confidence: 99%

“…The narrow-band response of QWIPs is also an advantage for multicolour applications because cross-talk between the colours can be inherently excluded, in contrast to multicolour MCTs. But nonetheless, MCTs show a better overall performance for operation temperatures above 60∼70 K, due to thermionic emission of the quantum-mechanically confined electrons within the quantum wells [2].…”

Section: Introductionmentioning

confidence: 99%

“…This is especially required for FPAs working in the LWIR and very long wavelength infrared (VLWIR) spectral range in order to achieve small values for the noise equivalent temperature difference (NEDT). As MCT detectors show a broad spectral response, the realization of multicolour infrared photodetectors is also not trivial due to spectral cross-talking effects [1,2].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Injector Quantum Dot Molecule Infrared Photodetector: A Concept for Efficient Carrier Injection

Gebhard

2011

Nano-Micro Lett.

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Quantum dot infrared photodetectors are expected to be a competitive technology at high operation temperatures in the long and very long wavelength infrared spectral range. Despite the fact that they already achieved notable success, the performance suffers from the thermionic emission of electrons from the quantum dots at elevated temperatures resulting in a decreasing responsivity. In order to provide an efficient carrier injection at high temperatures, quantum dot infrared photodetectors can be separated into two parts: an injection part and a detection part, so that each part can be separately optimized. In order to integrate such functionality into a device, a new class of quantum dot infrared photodetectors using quantum dot molecules will be introduced. In addition to a general discussion simulation results suggest a possibility to realize such a device.

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Assessment of quantum dot infrared photodetectors for high temperature operation

Cited by 48 publications

References 29 publications

Block Diagram Programming of Quantum Dot Sources and Infrared Photodetectors for Gamma Radiation Detection Through VisSim

Block Diagram Programming of Quantum Dot Sources and Infrared Photodetectors for Gamma Radiation Detection Through VisSim

Quantum Dots

Injector Quantum Dot Molecule Infrared Photodetector: A Concept for Efficient Carrier Injection

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