Assessment of Semiconductors by Scanning Electron Microscopy Techniques

Salviati, G.; Lazzarini, L.; Sekiguch, T.; Chen, B.

doi:10.1016/b978-0-44-453153-7.00110-3

Cited by 5 publications

(2 citation statements)

References 107 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The electrical and optical properties of the dislocations and created stacking faults (SFs) in the contaminated specimens were simultaneously studied by using EBIC and CL modes of a scanning electron microscope (SEM; Hitachi S4200) at room temperature. 11,12) The accelerating voltage and electron-beam (e-beam) current were 20 kV and 3 nA, respectively. The recombination activity of a defect is evaluated from its EBIC contrast that is defined by…”

Section: Methodsmentioning

confidence: 99%

Effect of Fe impurity on the dislocations in 4H-SiC: Insights from electrical and optical characterization

Chen

Sekiguchi

Matsuhata

et al. 2014

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The effect of Fe impurity on the dissociation and motion behavior of basal plane dislocations (BPDs) in 4H-SiC homoepitaxial layers was investigated by electron-beam-induced current (EBIC) and cathodoluminescence (CL) techniques. Under the electron-beam irradiation, the BPDs dissociated to C- and Si-core partials, and these two partials were connected by another partial termed as X in this study. Stacking faults (SFs) were formed among these partials. The recombination activities of the BPDs and partials were enhanced with the existence of Fe impurity. The SFs near the surface region showed obvious dark contrast in EBIC, which was different from that observed in the clean samples. The X partial kept moving with sustained electron-beam irradiation whereas this partial in the clean samples stopped motion when it was connected to the sample surface. The dark contrast of the SFs and the peculiar motion behavior of the X partial are discussed with the CL results.

show abstract

Section: Methodsmentioning

confidence: 99%

Effect of Fe impurity on the dislocations in 4H-SiC: Insights from electrical and optical characterization

Chen

Sekiguchi

Matsuhata

et al. 2014

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…The sample generates secondary electrons due to low energy and inelastic interactions with the beam and is primarily used for topographic inspection. In contrast, backscattered imaging results from incident electrons deflected away from “heavier elements,” providing crystalline and magnetic field information 12 , 13 . A detector captures these signals to produce topographical and morphological data to visualize cellular structures.…”

Section: Introductionmentioning

confidence: 99%

New Insights into RPE-Photoreceptor Complex Ultrastructure using Focused Ion Beam-Scanning Election Microscopy (FIB-SEM)

Low

Lim

Grant

et al. 2023

Preprint

View full text Add to dashboard Cite

Photoreceptors in the retina are specialized neuronal cells that perceive light and play a central role in the visual system. Damage to photoreceptors is a clinical feature often associated with various retinal degenerative disorders. The photoreceptor bed comprises a unique extracellular matrix (ECM) scaffold often described as the interphotoreceptor matrix (IPM) in the subretinal space, vital during retinal development and homeostasis. In this study, we used focused ion beam scanning electron microscopy (FIB-SEM) and transmission electron microscopy (TEM) to analyze the ultrastructural architecture of the retinal pigmented epithelium (RPE)-photoreceptor complex in mice. Additionally, we describe methods for retinal preparation in EM imaging. TEM images display ultrastructural retina layers, including Bruch’s membrane and the interdigitation zone (IZ). The 3-dimensional reconstruction of the outer retina revealed individual photoreceptors, the connection between their inner and outer segment via the photoreceptor cilia, and photoreceptor interaction with the RPE ciliary processes. Our findings highlight the importance of FIB-SEM in deciphering the ultrastructural details of RPE-photoreceptor interactions in the IPM complex which are essential for the maintenance of retinal architecture.

show abstract