Assessment of the potential of tin sulphide thin films prepared by sulphurization of metallic precursors as cell absorbers

Malaquias, João; Fernandes, Paulo A.; Salomé, Pedro M. P.; Cunha, A. F. da

doi:10.1016/j.tsf.2011.01.393

Cited by 62 publications

(31 citation statements)

References 12 publications

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“…layers using dc-magnetron sputtering and a final annealing /sulphurization process [11][12][13]. The process starts with the substrate cleaning (3×3 cm 2 soda lime glass) which consist in successive ultrasound baths of acetone/ethanol/deionised water and its subsequent drying process with a N 2 flow.…”

Section: Preparation Of the Filmsmentioning

confidence: 99%

“…The deposition order used was Mo/Zn/Cu/Sn/ and /Sn/Cu/ for CZTS and CTS, respectively [11,12]. For the growth of the binary sulphides only 1 deposition was necessary [13]. All precursor depositions were done under an Ar atmosphere, an operating pressure of 2×10 −3 mbar and power densities of 0.16 Wcm −2 , 0.36 W/cm −2 and 0.11 Wcm −2 for Cu, Zn and Sn, respectively.…”

Section: Preparation Of the Filmsmentioning

confidence: 99%

“…The experimental procedure described in the section is based in previously published work [2,[10][11][12][13], except for the growth of the cubic-ZnS phase.…”

Section: Introductionmentioning

confidence: 99%

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Study of polycrystalline Cu2ZnSnS4 films by Raman scattering

Fernandes

Salomé

Cunha

2011

Journal of Alloys and Compounds

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662

337

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Cu 2 ZnSnS 4 (CZTS) is a p-type semiconductor that has been seen as a possible low-cost replacement for Cu(In,Ga)Se 2 in thin film solar cells. So far compound has presented difficulties in its growth, mainly, because of the formation of unwanted phases like ZnS, Cu x SnS x+1 , Sn x S y , Cu 2−x S and MoS 2 . X-ray diffraction analysis (XRD), which is mostly used for phase identification cannot resolve some of these phases from the kesterite/stannite CZTS and thus the use of a complementary technique is needed. Raman scattering analysis can help distinguishing these phases not only laterally but also in depth. Knowing the absorption coefficient and using different excitation wavelengths in Raman scattering analysis, one is capable of profiling the different phases present in multi-phase CZTS thin films.This work describes in a concise form the methods used to grow chalcogenide compounds, such as, CZTS, Cu x SnS x+1 , Sn x S y and cubic ZnS based on the sulphurization of stacked metallic precursors. The results of the films' characterization by XRD, electron backscattered diffraction and scanning electron microscopy/energy dispersive spectroscopy techniques are presented for the CZTS phase. The limitation of XRD to identify some of the possible phases that can remain after the sulphurization process are investigated. The results of the Raman analysis of the phases formed in this growth method and the advantage of using this technique in identifying them are presented. Using different excitation wavelengths it is also analysed the CZTS film in depth showing that this technique can be used as non destructive methods to detect unwanted phases.

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Section: Preparation Of the Filmsmentioning

confidence: 99%

Section: Preparation Of the Filmsmentioning

confidence: 99%

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Study of polycrystalline Cu2ZnSnS4 films by Raman scattering

Fernandes

Salomé

Cunha

2011

Journal of Alloys and Compounds

Self Cite

662

337

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“…One of the most effective methods of phase analysis of Sn x S y compounds is Raman spectroscopy [31,32]. This method is mostly used together with XRD and allows one not only to study phase composition but also to identify polytypes in the samples [29,33].…”

Section: Introductionmentioning

confidence: 99%

Structural and electrical properties of SnS2 thin films

Voznyi

Kosyak

Opanasyuk

et al. 2016

Materials Chemistry and Physics

103

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“…Thin films of SnS 2 were fabricated by various techniques like close-spaced sublimation [11], sulphurization of metallic precursors [12], atmospheric pressure chemical vapor deposition [13], chemical vapor transport [14], chemical deposition [15], vacuum evaporation [16,17], dip coating [18,19], solvothermal process [20], chemical spray pyrolysis [21,22] and each method has its own characteristic advantages and drawbacks in producing homogeneous and defect-free thin film. Among them, nebulized spray pyrolysis method is principal to prepare tin disulfide thin film, which is a low-cost method that can be used to coat uniform deposition on large surface area [23] with less solution wastage.…”

Section: Introductionmentioning

confidence: 99%

Influence of tin precursor concentration on physical properties of nebulized spray deposited tin disulfide thin films

Anitha¹,

Anitha²,

Mohamed³

et al. 2018

Journal of Asian Ceramic Societies

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Tin disulfide thin films were prepared with different molarities of tin species (M Sn ) at the optimized substrate temperature using the Nebulized Spray pyrolysis technique to obtain better crystallinity with mono phase thin films. The concentration of Tin IV chloride Penta hydrate precursor is varied from 0.05:0.4 to 0.25:0.4 (SnCl 4 .5H 2 O: thiourea) to achieve correct stoichiometry and to tune the concentration of Tin ions in the SnS 2 thin films. These films were well adherent, uniform, and shiny. Lower concentrations of Tin yields highly textured SnS 2 thin films with (001) crystallite orientation. On increasing the concentration, the multi-phases (SnS and Sn 2 S 3 ) were found to be present along with SnS 2 material. The platelet-like grains were observed from SEM analysis in these SnS 2 films. Multiple interference effects were predominant in all these thin films in the wavelength region of 600-1100 nm. The direct optical band gap of tin disulfide thin films had decreased from 3.2 eV to 2.75 eV with an increase in M Sn from 0.05 to 0.2 M, respectively, and further increased to 3.0 eV for 0.25 M concentration. Using Hall Effect measurement, the type of semiconductor is found to be of n-type. A minimum resistivity value of 2.19 × 10 3 Ω cm was obtained for the film grown at M Sn = 0.2 M.ARTICLE HISTORY

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Assessment of the potential of tin sulphide thin films prepared by sulphurization of metallic precursors as cell absorbers

Cited by 62 publications

References 12 publications

Study of polycrystalline Cu2ZnSnS4 films by Raman scattering

Study of polycrystalline Cu2ZnSnS4 films by Raman scattering

Structural and electrical properties of SnS2 thin films

Influence of tin precursor concentration on physical properties of nebulized spray deposited tin disulfide thin films

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