“…This intensity can be described using the interatomic N⋅⋅⋅Si distance ( d SiN ), the Mulliken ( P SiN ) and Wiberg ( W SiN ) populations of the N→Si contact, the NBO energy of the bonding interaction between the N s lone pair (LP), and the antibonding orbital of the Si‐X bond obtained as a second‐order perturbation energy ( E (2)[n n ,σ* SiX ]), the AIM energy of the N→Si interaction ( E SiN ), the degree of the electron density transfer from the nitrogen LP orbital (Δ N [n n ]) to an acceptor moiety XSiO 3 during the formation of the N→Si bond, and others . All these strength characteristics of the N→Si bond, as a rule, vary in a consistent manner with the variation of X . Therefore it could be expected that the potentials of the proper oxidation of 1 to be closely related to the geometrical, energetic, electronic, and orbital parameters of the N→Si attractive interaction in the parent neutral molecule.…”