Asymmetric Ferroelectric-Gated Two-Dimensional Transistor Integrating Self-Rectifying Photoelectric Memory and Artificial Synapse

Abstract

Ferroelectric field-effect transistors (Fe-FET) are promising candidates for future information devices. However, they suffer from low endurance and short retention time, which retards the application of processing memory in the same physical processes. Here, inspired by the ferroelectric proximity effects, we design a reconfigurable two-dimensional (2D) MoS2 transistor featuring with asymmetric ferroelectric gate, exhibiting high memory and logic ability with a program/erase ratio of over 106 and a self-rectifying ratio of 103. Interestingly, the robust electric and optic cycling are obtained with a large switching ratio of 106 and nine distinct resistance states upon optical excitation with excellent nonvolatile characteristics. Meanwhile, the operation of memory mimics the synapse behavior in response to light spikes with different intensity and number. This design realizes an integration of robust processing memory in one single device, which demonstrates a considerable potential of an asymmetric ferroelectric gate in the development of Fe-FETs for logic processing and nonvolatile memory applications.

Ferroelectrically Modulated and Enhanced Photoresponse in a Self-Powered α-In2Se3/Si Heterojunction Photodetector

“…2D hybrid perovskites ferroelectric materials have superior photoelectric capabilities but are unstable and poisonous to heavy metals, which further limits their practical applications . Fortunately, functional 2D ferroelectric materials can demonstrate considerable modulation capabilities in channel conductance, which presents significant promise for next-generation integrated optoelectronic systems. , …”

“…Some α-In 2 Se 3 -based photodetectors − have been reported, but most of these devices require a voltage to operate, and there is no synergy to enhance the optimal parameters (such as light/dark current ratio or detectivity) and the response speed. Considering the ferroelectric local field regulates and enhances heterojunction built-in electric fields, it is possible to design a photodetector that simultaneously achieves a fast response, high sensitivity, and low power consumption. , Moreover, it is worth noting that few researchers pay attention to the detailed relation between the α-In 2 Se 3 ferroelectricity and the photoresponse of the device.…”

“… 24 Fortunately, functional 2D ferroelectric materials can demonstrate considerable modulation capabilities in channel conductance, which presents significant promise for next-generation integrated optoelectronic systems. 11 , 25 …”

“…24 Fortunately, functional 2D ferroelectric materials can demonstrate considerable modulation capabilities in channel conductance, which presents significant promise for next-generation integrated optoelectronic systems. 11,25 In recent years, α-In 2 Se 3 with a noncentrosymmetric crystal structure has been discovered as a stable 2D vdW ferroelectric semiconductor. 26−28 The ferroelectric polarization of α-In 2 Se 3 can also be switched by the sweeping voltage because of its outof-plane (OOP) and in-plane (IP) polarization dipole locking.…”

2D-Material-Based Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing

“…Further investigation is needed to deeply understand the volatility and nonvolatility of devices based on α-In 2 Se 3 . Meanwhile, researchers have also reported a 3T synaptic device, the structure of which consists of 3D ferroelectric materials and other 2D materials. , The 2D materials act as channel materials. The 3D ferroelectric materials are deposited on the 2D materials, and their polarization can modulate the conductance of the channel materials.…”