Asymmetric Hysteresis for Probing Dzyaloshinskii–Moriya Interaction

Han, Dong‐Soo; Kim, NH Nam; Kim, JS June Seo; Yin, Yuxiang; Koo, Jung-Woo; Cho, Jaehun; Lee, Sukmuck; Kläui, Mathias; Swagten, Hjm Henk; Koopmans, B.; You, Chun‐Yeol

doi:10.1021/acs.nanolett.6b01593

Cited by 91 publications

(80 citation statements)

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“…Large effective DMI strenghts have been observed for Pt/Co/Ir stacks 24, 28 . In contrast to symmetric stacks where the interfacial DMI of both interfaces (partially) cancel each other, this system could have an enhanced total DMI, because opposite signs of the DMI are expected for Pt/Co and Ir/Co interfaces 23, 29, 30 (though recently conflicting observations were reported 31 ).…”

Section: Resultsmentioning

confidence: 99%

“…Because these new stacks are structurally less symmetrical than the Pt/Co/Pt sample that was used up to now, the DMI (and therefore the success rate of the racetrack) is expected to be increased. The DMI was not measured independently for the samples used in this work, but studies of similar samples, grown in the same lab, can be found in literature 17, 24 .…”

Section: Resultsmentioning

confidence: 99%

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Racetrack memory based on in-plane-field controlled domain-wall pinning

Ummelen

Swagten

Koopmans

2017

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Magnetic domain wall motion could be the key to the next generation of data storage devices, shift registers without mechanically moving parts. Various concepts of such so-called ‘racetrack memories’ have been developed, but they are usually plagued by the need for high current densities or complex geometrical requirements. We introduce a new device concept, based on the interfacial Dzyaloshinskii-Moriya interaction (DMI), of which the importance in magnetic thin films was recently discovered. In this device the domain walls are moved solely by magnetic fields. Unidirectionality is created utilizing the recent observation that the strength with which a domain wall is pinned at an anisotropy barrier depends on the direction of the in-plane field due to the chiral nature of DMI. We demonstrate proof-of-principle experiments to verify that unidirectional domain-wall motion is achieved and investigate several material stacks for this novel device including a detailed analysis of device performance for consecutive pinning and depinning processes.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Racetrack memory based on in-plane-field controlled domain-wall pinning

Ummelen

Swagten

Koopmans

2017

Sci Rep

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“…Currently, the DMI constant is measured by the following techniques: by observing the frequency nonreciprocity of spin-wave propagation with Brillouin light spectroscopy [20,42,43], by asymmetric magnetic domain growth, [44] by field-driven domain-wall motion in the creep regime, [43] by current-driven domain-wall motion under applied magnetic field, [45] and by asymmetric hysteresis [46]. Our theory offers another method to obtain the interfacial DMI constant from the direct measurements of the tilt angle of the Dzyaloshinskii domain wall.…”

Section: Discussionmentioning

confidence: 99%

Theory of the Dzyaloshinskii domain-wall tilt in ferromagnetic nanostrips

et al. 2017

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General rightsThis document is made available in accordance with publisher policies. Please cite only the published version using the reference above. Full terms of use are available: http://www.bristol.ac.uk/pure/about/ebr-terms PHYSICAL REVIEW B 96, 134417 (2017) We present an analytical theory of domain-wall tilt due to a transverse in-plane magnetic field in a ferromagnetic nanostrip with out-of-plane anisotropy and Dzyaloshinskii-Moriya interaction (DMI). The theory treats the domain walls as one-dimensional objects with orientation-dependent energy, which interact with the sample edges. We show that under an applied field the domain wall remains straight, but tilts at an angle to the direction of the magnetic field that is proportional to the field strength for moderate fields and sufficiently strong DMI. Furthermore, we obtain a nonlinear dependence of the tilt angle on the applied field at weaker DMI. Our analytical results are corroborated by micromagnetic simulations.

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“…Interfacial effects are generally expected to scale as 1/t. In some other studies that have investigated the dependence of D on magnetic layer thickness it has been possible to fit a straight line of the form D ∝ 1/t to DM energy data for thin-film systems [25,26]. Other studies show a linear dependence but with a nonzero intercept, suggesting some contribution from atoms that do not lie at a sharp heavy-metal/ferromagnet interface layer [27].…”

Section: B Dzyaloshinskii-moriya Energymentioning

confidence: 99%

Magnetic properties, domain-wall creep motion, and the Dzyaloshinskii-Moriya interaction in Pt/Co/Ir thin films

et al. 2018

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We study the magnetic properties of perpendicularly magnetized Pt/Co/Ir thin films and investigate the domain-wall creep method of determining the interfacial Dzyaloshinskii-Moriya (DM) interaction in ultrathin films. Measurements of the Co layer thickness dependence of saturation magnetization, perpendicular magnetic anisotropy, and symmetric and antisymmetric (i.e., DM) exchange energies in Pt/Co/Ir thin films have been made to determine the relationship between these properties. We discuss the measurement of the DM interaction by the expansion of a reverse domain in the domain-wall creep regime. We show how the creep parameters behave as a function of in-plane bias field and discuss the effects of domain-wall roughness on the measurement of the DM interaction by domain expansion. Whereas modifications to the creep law with DM field and in-plane bias fields have taken into account changes in the energy barrier scaling parameter α, we find that both α and the velocity scaling parameter v 0 change as a function of in-plane bias field.

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Asymmetric Hysteresis for Probing Dzyaloshinskii–Moriya Interaction

Cited by 91 publications

References 53 publications

Racetrack memory based on in-plane-field controlled domain-wall pinning

Racetrack memory based on in-plane-field controlled domain-wall pinning

Theory of the Dzyaloshinskii domain-wall tilt in ferromagnetic nanostrips

Magnetic properties, domain-wall creep motion, and the Dzyaloshinskii-Moriya interaction in Pt/Co/Ir thin films

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