A Q-band class-B power amplifier implemented in a 0.13 μm SiGe BiCMOS process is presented. At 45 GHz, the PA achieves a 17.5 dBm saturated output power, a 16.6 dB peak power gain, and a 26% peak power-added efficiency (PAE) with a 2.5V supply. A 2-stage, single-ended, inductor matched topology is used. To support envelope modulation transceiver topologies, the output common-emitter stage is optimized for high efficiency under varying supply voltage and maintains a peak PAE of greater than 21% throughout the supply voltage range of 1.3V to 2.5V. The PA occupies a total die area of 0.2 mm 2 .Index Terms -Power amplifier (PA), millimeter-wave (mmW) power amplifier, silicon germanium (SiGe) HBT, class-B, Q-band.