Asymmetric resistive switching by anion out-diffusion mechanism in transparent Al/ZnO/ITO heterostructure for memristor applications

Gora, Suman; Lavanya, Thyda; Dasi, Gnyaneshwar; Muniramaiah, Reddivari; Thakre, Atul; Gangwar, Jitendra; Joseph, D. Paul; Kovendhan, M.; Azeem, P. Abdul; Dinakar, D.; Thangaraju, K.; Borkar, Hitesh

doi:10.1016/j.surfin.2022.101950

Cited by 12 publications

(5 citation statements)

References 58 publications

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“…As the negative voltage applied, no further obvious decrease of the current (no Reset process) is exhibited. Hence, the switching performance is unipolar instead of bipolar [ 38 ]. Moreover, there is no symmetrical switching behavior during the negative voltage applying.…”

Section: Resultsmentioning

confidence: 99%

Direct Laser Irradiation and Modification of 2D Te for Development of Volatile Memristor

Wang

Guan²,

Wang³

et al. 2023

Materials

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Laser irradiation, as a kind of post-fabrication method for two-dimensional (2D) materials, is a promising way to tune the properties of materials and the performance of corresponding nano-devices. As the memristor has been regarded as an excellent candidate for in-memory devices in next-generation computing system, the application of laser irradiation in developing excellent memristor based on 2D materials should be explored deeply. Here, tellurene (Te) flakes are exposed to a 532 nm laser in the air atmosphere to investigate the evolutions of the surface morphology and atom structures under different irradiation parameters. Laser is capable of thinning the flakes, inducing amorphous structures, oxides and defects, and forming nanostructures by controlling the irradiation power and time. Furthermore, the laser-induced oxides and defects promote the migration of metal ions in Te, resulting in the formation of the conductive filaments, which provides the switching behavers of volatile memristor, opening a route to the development of next-generation nano-devices.

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Section: Resultsmentioning

confidence: 99%

Direct Laser Irradiation and Modification of 2D Te for Development of Volatile Memristor

Wang

Guan²,

Wang³

et al. 2023

Materials

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“…The slope increases to ∼2 when the voltage increases, indicating partial trap filling. 26,27 In contrast, under light intensity, there is no partial trap-filling region before the SET process, as the photogenerated carriers fill the trap states. Under dark conditions, at SET voltage, the high slope ∼7 (I ∝ V n , n > 2) indicates that the current is limited by the density of trap states in the device, which can be associated with forming a conductive filament.…”

Section: Resultsmentioning

confidence: 99%

Probing the Photo-Activated Switching Dynamics of Halide Perovskite Memristors

Yadav

Gora

Kumar

et al. 2023

ACS Appl. Electron. Mater.

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The hysteresis effects due to electronic-ionic conductivity can be utilized to develop memory devices for information storage and brain-like computing. Halide perovskitesbased devices exhibit frequent hysteresis in their current−voltage curves, making them suitable for neuromorphic computing. Despite recent advances in this field, the exact mechanism behind switching between high and low resistive states in halide perovskite memristors is still under debate. This study aims to understand the switching mechanism and charge transport in the ITO/MAPbBr 3 / Au device's geometry by analyzing their SET-RESET states through current−voltage characteristics and impedance spectroscopy at different applied biases and under different light intensities. A clear shift in the SET voltage due to increased light power correlates with the electronic−ionic coupling and ion migration. In the impedance spectroscopy measurement, the AC conductivity shows a negative slope at the SET state, especially at the low-frequency regime due to the ion-induced voltage, which gets screened by photogenerated charge carriers.

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“…2 Transition-metal oxides (ZnO, HfO 2 , TiO 2 , Ta 2 O 5 , Ga 2 O 3 , CuO, NiO, and others) are promising information storage medium for RRAM. 3,4 They are usually fabricated using solution methods 5 and vacuum methods such as sputter, 6 pulse laser deposition, 7 atomic layer deposition, 8 and so on. In recent years, the memristor based on transition-metal-oxide has been put forward as a competitive candidate to imitate synaptic functions in bionic neuromorphic systems, because of their structural similarity with sandwiches, gradually or suddenly changing resistance, low energy consumption and convenience for intensive 3D integration.…”

Section: Introductionmentioning

confidence: 99%

“…3,12,16 ZnO-based memristor is one of the earliest studied. 5,6,[19][20][21] Because ZnO is a wide band gap (3.37 eV) semiconductor, which has stable chemical stability, no pollution and low price. Utilizing ZnO as a resistive switching layer may still present some interesting performance.…”

Section: Introductionmentioning

confidence: 99%

Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor

Huang

et al. 2022

RSC Adv.

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Asymmetric resistive switching by anion out-diffusion mechanism in transparent Al/ZnO/ITO heterostructure for memristor applications

Cited by 12 publications

References 58 publications

Direct Laser Irradiation and Modification of 2D Te for Development of Volatile Memristor

Direct Laser Irradiation and Modification of 2D Te for Development of Volatile Memristor

Probing the Photo-Activated Switching Dynamics of Halide Perovskite Memristors

Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor

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