Asymmetrically Doped GaAs/AlGaAs Double-Quantum-Well Structure for Voltage-Tunable Infrared Detection

Choi, Jae Kyu; Vagidov, N. Z.; Sergeev, Andrei; Kalchmair, S.; Strasser, G.; Vasko, F. T.; Mitin, Vladimir

doi:10.7567/jjap.51.074004

Cited by 14 publications

(8 citation statements)

References 24 publications

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“…Quantum well infrared photodetectors (QWIPs) are a well-established technology with numerous possibilities to manage electron levels and to control spectral and kinetic characteristics [1][2][3][4][5][6]. These unique features are favorable for multicolor detection, which is crucial for numerous applications including advanced imaging, sensing, and object discrimination and identification [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Bias-tunable IR photodetector based on asymmetrically doped GaAs/AlGaAs double-quantum-well nanomaterial for remote temperature sensing

et al. 2016

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We designed, fabricated, and characterized multi-color IR photodetectors with asymmetrical doping of GaAs/AlGaAs double quantum wells (DQW). We measured and analyzed spectral and noise characteristics to evaluate feasibility of these photodetectors for remote temperature sensing at liquid nitrogen temperatures. The bias voltage controls the charge distribution between the two wells in a DQW unit and provides effective tuning of IR induced electron transitions. We have found that the responsivity of our devices is symmetrical and weakly dependent on the bias voltage because the doping asymmetry compensates the effect of dopant migration in the growth direction. At the same time, the asymmetrical doping strongly enhances the selectivity and tunability of spectral characteristics by bias voltage. Multicolor detection of our QWIP is realized by varying the bias voltage. Maximum detection wavelength moves from 7.5 µm to 11.1 µm by switching applied bias from -5 V to 4 V. Modeling shows significant dependence of the photocurrent ratio on the object temperature regardless of its emissivity and geometrical factors. We also experimentally investigated the feasibility of our devices for remote temperature sensing by measuring the photocurrent as a response to blackbody radiation with the temperature from 300 o C to 1000 o C in the range of bias voltages from -5 V to 5 V. The agreement between modelling and experimental results demonstrates that our QWIP based on asymmetrically doped GaAs/AlGaAs DQW nanomaterial is capable of remote temperature sensing. By optimizing the physical design and varying the doping level of quantum wells, we can generalize this approach to higher temperature measurements. In addition, continuous variation of bias voltage provides fast collection of large amounts of photocurrent data at various biases and improves the accuracy of remote temperature measurements via appropriate algorithm of signal processing.

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Section: Introductionmentioning

confidence: 99%

Bias-tunable IR photodetector based on asymmetrically doped GaAs/AlGaAs double-quantum-well nanomaterial for remote temperature sensing

et al. 2016

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“…In recent years, a great deal of attempts has been made to study asymmetric quantum well structures because of their potential applications in electronic and optical devices [1][2][3][4][5][6][7][8][9][10]. Efforts have been made to utilize asymmetrically doped coupled quantum well GaAs/AlGaAs structures to develop and characterize tunable mid-infrared photodetectors [1].…”

Section: Introductionmentioning

confidence: 99%

“…Efforts have been made to utilize asymmetrically doped coupled quantum well GaAs/AlGaAs structures to develop and characterize tunable mid-infrared photodetectors [1]. Suitably engineered GaAs/AlGaAs double quantum well structures have been shown to exhibit coherent terahertz emission due to intersubband excitation between two lowest conduction subbands [2].…”

Section: Introductionmentioning

confidence: 99%

Enhancement of multisubband electron mobility in asymmetrically doped coupled double quantum well structure

Das

Nayak

Sahu

et al. 2015

Physica B: Condensed Matter

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“…Recently asymmetric double quantum well structures (ADQWs) have emerged as potential materials for the fabrication of electronic and optical devices. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] Attempts have been made to optimize GaAs-based ADQWs to exhibit maximum optical modulation sensitivity by varying the barrier width, barrier position, and well width. 1) An InGaAlAs/AlGaAs double-quantum well semiconductor laser has been fabricated which shows high quantum efficiency and high power efficiency using asymmetric waveguide structures.…”

Section: Introductionmentioning

confidence: 99%

“…10) A tunable mid-infrared photodetector based on asymmetrically doped coupled quantum well GaAs/AlGaAs structure has been fabricated and analyzed. 11) It is shown that oriented polaritons having enhanced dipole moments can be produced in strongly-coupled semiconductor microcavity with asymmetric double quantum wells. 12) Attempts have been made to study the magnetic-fieldinduced charged excitonic transitions in one-side modulation-doped AlGaAs/GaAs asymmetric coupled double quantum wells where two low-energy conduction subbands are strongly coupled.…”

Section: Introductionmentioning

confidence: 99%

Structural asymmetry induced enhancement of electron mobility in coupled double quantum well structures

Das¹,

Nayak²,

Панда³

et al. 2014

Jpn. J. Appl. Phys.

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We study the enhancement of electron mobility through structural asymmetry of a delta doped GaAs/Al x Ga 1%x As coupled quantum well structure. We obtain the subband energy levels and wave functions through selfconsistent solution of the Schrodinger equation and the Poisson's equation. We calculate the low temperature electron mobility by considering screened scattering potentials due to ionized impurities, interface roughness and alloy disorder by adopting random phase approximation. We show that the mobility increases with increase in the asymmetry of the doping concentrations. The change in mobility due to interchange of doping concentrations of the barriers is because of asymmetry of the interface roughness scattering potential. The barrier dependent enhancement in mobility is controlled by the variation of the subband Fermi wave vector through splitting in the subband energy levels. We show that the range of well width, up to which the interface roughness scattering dominates, depends on the doping concentration through intersubband effects.

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Asymmetrically Doped GaAs/AlGaAs Double-Quantum-Well Structure for Voltage-Tunable Infrared Detection

Cited by 14 publications

References 24 publications

Bias-tunable IR photodetector based on asymmetrically doped GaAs/AlGaAs double-quantum-well nanomaterial for remote temperature sensing

Bias-tunable IR photodetector based on asymmetrically doped GaAs/AlGaAs double-quantum-well nanomaterial for remote temperature sensing

Enhancement of multisubband electron mobility in asymmetrically doped coupled double quantum well structure

Structural asymmetry induced enhancement of electron mobility in coupled double quantum well structures

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