Enhancement of multisubband electron mobility in asymmetrically doped coupled double quantum well structure

Das, Sudhakar; Nayak, Rasmita K.; Sahu, Trinath; Панда, А. К.

doi:10.1016/j.physb.2015.07.014

Cited by 10 publications

(2 citation statements)

References 19 publications

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“…In a system with occupation of two sub-bands, electron mobility is depending on inter sub-band scattering [28,29]. Double quantum wells have the advantage of tunnelling and confinement effect [30][31][32]. Asymmetry in the structure parameters, like doping concentration, well width and barrier width change the distribution of sub-band wave functions.…”

Section: Introductionmentioning

confidence: 99%

Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors

Panda

Pradhan²,

Sahu³

et al. 2022

Phys. Scr.

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Nonmonotonic electron mobility is obtained in InxGa1-xAs/GaAs double quantum well pseudomorphic heterostructure field effect transistor by changing the structure parameters. We show that a rapid drop in mobility occurs at the point of resonance of sub-band states due to asymmetric variation of doping concentrations. The sub-band wave function distributions change significantly near the resonance and influence the sub-band mobilities through the scattering potentials, there by causing the dip in µ. The depth of nonlinearity in µ enhances by increasing the central barrier width and the difference between the well widths. On the other hand, variation of µ as a function of asymmetric change of well widths leads to a hump like raise in µ under unequal doping concentrations. Our results of nonlinear mobility can be utilized in low temperature transistor applications.

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Section: Introductionmentioning

confidence: 99%

Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors

Panda

Pradhan²,

Sahu³

et al. 2022

Phys. Scr.

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“…Tulupenko et al [19] have calculated the intersubband absorption coefficients for either center, or edge δ-doped quantum wells. The multisubband electron mobility in a barrier δ-doped GaAs double quantum well structure using the self-consistent solution of the coupled Schrödinger equation and Poisson's equation was studied by Das et al [20]. Almansour et al [21] have investigated the effects of the concentration and the thickness of Si δ-doped layer on optical absorption and refractive index changes in an InAlN/GaN single quantum well taking into account the piezoelectric polarizations.…”

Section: Introductionmentioning

confidence: 99%

Study of non-linear optical properties of center and edge delta-doped multiple quantum wells

Gambhir

Prasad

2018

Rev. Mex. Fís.

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In the present paper, the linear and non-linear optical properties of GaAs/AlGaAs multiple quantum well with on-center and on-edge delta doping are studied within the effective mass approximation. The delta potential is analytically modeled within each quantum well potential to obtain the energy levels and the corresponding wave functions using the robust finite difference method. The linear and non-linear optical absorption coefficients and changes in the refractive index are studied in the presence of a static magnetic and a periodic laser field using the density matrix approach. The obtained results show that the position of resonances and the amplitude of the optical absorption coefficients and the refractive index changes can be modified by varying the magnetic field and strength and position of doping potential. Lastly, an increase of the optical intensity appreciably changes the total absorption coefficient, as well as the total refractive index changes. Obtained results are important for the design of various electronic components such as high-power FETs and infrared photonic devices based on the intersubband transition of electrons in δ-doped multiple quantum wells.

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Nonmonotonic Electron Mobility in Asymmetrically Doped V-shaped Coupled Quantum Well Field-Effect Transistor Structure

Панда

Jena

Palo

et al. 2021

Computers and Devices for Communication

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Enhancement of multisubband electron mobility in asymmetrically doped coupled double quantum well structure

Cited by 10 publications

References 19 publications

Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors

Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors

Study of non-linear optical properties of center and edge delta-doped multiple quantum wells

Nonmonotonic Electron Mobility in Asymmetrically Doped V-shaped Coupled Quantum Well Field-Effect Transistor Structure

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