Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors

Panda, Sangita R.; Pradhan, Manoranjan; Sahu, Trinath; Панда, А. К.

doi:10.1088/1402-4896/ac9862

Cited by 3 publications

(4 citation statements)

References 35 publications

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“…In the inset of figure 6, the necessary changes in subband energy levels E 0 and E 1 fixing E F = 0 as a function of n d2 are presented. We note that there is anti-crossing of E 0 and E 1 near n d1 = n d2 = 1.5 × 10 18 cm −3 at which the subband states of the wells exhibit resonance [28].…”

Section: Resultsmentioning

confidence: 73%

“…Intra-SSRMEs are B 00 and B 11 and inter-SSRMEs are C 01 and D 01 . They are related to scattering potential V q kn eff ( ) with screening [28]:…”

Section: Theorymentioning

confidence: 99%

“…Various work has been done to study the electron transport properties of strained InGaAs-based QW pHEMT structures [23][24][25][26][27][28]. Electric field induced non-monotonic electronic transport in AlGaAs/InGaAs coupled QW structure has been studied [29].…”

Section: Introductionmentioning

confidence: 99%

“…Improved carrier transport properties can be achieved by changing the GaAs/InGaAs heterostructure HEMT properties with surface treatment [30]. It has been shown that in a multi-subband occupied quantum well system; the electron mobility μ substantially depends on the intersubband effects [25][26][27][28][29][31][32][33].…”

Section: Introductionmentioning

confidence: 99%

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Enhancement of electron transport mobility in GaAs/InGaAs asymmetrically doped narrow quantum well pHEMT structure

Panda,

Pradhan,

Sahu

et al. 2023

Phys. Scr.

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We study the effect of asymmetric doping concentrations on the electron mobility µ in GaAs/InGaAs-based single quantum well (SQW) as well as double quantum well (DQW) pseudomorphic high electron mobility transistor (pHEMT) structures. Unequal doping in the substrate and surface barriers (nd1 and nd2) causes asymmetric distributions of subband wave functions, 0 and 1, which influence the subband scattering rate matrix elements (SSRME), thereby affecting the subband mobility µn. For narrow well widths (ww), in SQW structures, mostly a single subband is occupied. We show that an increase in nd2, keeping nd1 fixed, enhances µ nonlinearly. The interface roughness (ir-) scattering mostly dominates µ in thin wells (ww<70 Å), while generally, µ is determined by ionized impurity (ii-) scattering and to some extent by alloy disorder (ad-) scattering. The influence of ir-scattering enhances, while ad-scattering diminishes, by reducing nd2. For DQW, a double subband is occupied. In a symmetric DQW structure at resonance, nd1=nd2, 0 and1 equally extend into both the wells. For a minor variation, say nd1>nd2, 0 mostly lies in one well while 1 is in the other well. In the case of nd1<nd2, the distribution reverts. The substantial changes in 0 and1 influence the intra- and inter-SSRME differently through intersubband effects, leading to nonlinear µn as a function of nd2. Taking nd1+nd2= 3× 1018 cm-3, we show that for ww1=ww2= 80Å, a shallow dip in µ occurs at nd1=nd2= 1.5× 1018 cm-3. Whereas, for ww1= 60 Å and ww2= 100Å, the dip in µ occurs near the corresponding resonance, nd1=2.3× 1018 cm-3 and nd2= 0.7× 1018 cm-3. Our results of nonlinear µ can be utilized for performance analysis of pHEMT.

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Section: Resultsmentioning

confidence: 73%

“…Intra-SSRMEs are B 00 and B 11 and inter-SSRMEs are C 01 and D 01 . They are related to scattering potential V q kn eff ( ) with screening [28]:…”

Section: Theorymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Enhancement of electron transport mobility in GaAs/InGaAs asymmetrically doped narrow quantum well pHEMT structure

Panda,

Pradhan,

Sahu

et al. 2023

Phys. Scr.

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Asymmetric Doping‐Dependent Electron Transport Mobility in In_xGa_1–xAs/GaAs Quantum Well Field‐Effect Transistor Structure

Panda,

Pradhan,

Mallik

et al. 2024

Physica Status Solidi (b)

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We analyze the asymmetric doping‐dependent electron mobility μ of GaAs/InGaAs/GaAs quantum well field‐effect transistor (QWFET) structure. We consider doping concentrations, nd1 and nd2, in the substrate and surface barriers, respectively, and study μ as a function of nd2, taking (nd1 + nd2) unchanged. An increase in nd2 decreases nd1, yielding interesting changes in the occupation of subbands. For well width W < 164 Å, μ is due to single subband occupancy (SSO). Around W = 164 Å, there occurs first SSO, then double subband occupancy (DSO), and again SSO with an increase in nd2. Near the transition of subbands, abrupt discontinuities in μ arise due to inter‐subband effects. Thus, high to low and then high values of μ are obtained, displaying almost flat‐like variations, symmetric about |nd2 − nd1| = 0. As W becomes wider, complete DSO occurs throughout the range of nd2 having reduced μ. Alternatively, keeping nd1 unchanged and by increasing nd2, μ raises due to enhanced N s , with a drop near the transition from SSO to DSO. Under SSO, μ is controlled by the ionized impurity and alloy disorder scatterings, while under DSO, the impurity scattering determines μ. Our analysis on μ can help to examine the inter‐subband effects on device characteristics of the QWFET system.

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Occurrence of Nonlinear Electron Mobility in GaAs/InxGa1−xAs Coupled Double Quantum Well FET

Panda,

Pradhan,

Sahu

et al. 2023

Lecture Notes in Electrical Engineering

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Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors

Cited by 3 publications

References 35 publications

Enhancement of electron transport mobility in GaAs/InGaAs asymmetrically doped narrow quantum well pHEMT structure

Enhancement of electron transport mobility in GaAs/InGaAs asymmetrically doped narrow quantum well pHEMT structure

Asymmetric Doping‐Dependent Electron Transport Mobility in In_xGa_1–xAs/GaAs Quantum Well Field‐Effect Transistor Structure

Occurrence of Nonlinear Electron Mobility in GaAs/InxGa1−xAs Coupled Double Quantum Well FET

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Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors

Cited by 3 publications

References 35 publications

Enhancement of electron transport mobility in GaAs/InGaAs asymmetrically doped narrow quantum well pHEMT structure

Enhancement of electron transport mobility in GaAs/InGaAs asymmetrically doped narrow quantum well pHEMT structure

Asymmetric Doping‐Dependent Electron Transport Mobility in InxGa1–xAs/GaAs Quantum Well Field‐Effect Transistor Structure

Occurrence of Nonlinear Electron Mobility in GaAs/InxGa1−xAs Coupled Double Quantum Well FET

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Asymmetric Doping‐Dependent Electron Transport Mobility in In_xGa_1–xAs/GaAs Quantum Well Field‐Effect Transistor Structure