perovskite films. Fortunately, more and more atomic thickness spontaneous electric polarization has been discovered in ionic compound monolayer with the puckered lattice structure. For example, atomic thickness ferroelectricity has been found in monolayer chalcogenides: M (1) X, M (2) X 2 , and M 2 (3) X 3 (M (1) = Ge, Sn; M (2) = Mo, W; M (3) = Al, Ga, In; X = S, Se, Te). [4][5][6][7] Fascinatingly more, ferroelectricity was also discovered in the 2D elemental materials, such as phosphorene nanoribbons, [8] group-V (As, Sb, Bi) monolayer [9] and tellurium multilayers, [10] which was previously thought impossible because of the stabilized high symmetry in elemental bulk structures and the equal distribution of charge per atom. In other words, bulk element cannot satisfy the two main mechanisms of ferroelectric polarization: ion-displacement and electronic polarization. Therefore, the study of elemental ferroelectricity involved in structural reconstruction is a fundamental question and will undoubtedly expand the application of ferroelectrics in device miniaturization.In the last decade, intensive efforts have been devoted to discover the potential 2D materials for the application of micro-nano electronic devices. [11][12][13][14][15] Common 2D materials have a layered 3D structure with covalently bonded, atomically thin layers held together by weak van der Waals forces. Through high-throughput computations, however, more than a thousand 2D materials with various functions have been verified or predicted, even including elemental 2D metals. [16,17] Among elemental 2D materials, group-VI elements have been predicted and successfully fabricated at last year. [18][19][20][21] In the new study, Jia and co-workers point out the underlying formation mechanism of tellurene is inherently rooted in the multi valency nature of Te, and further predict the importance of multivalency in the layering behavior of Se. [18] Motivated by this discovery, we have performed a systematic densityfunctional study on various dimension elemental tellurium, and found that the atomic structure and electronic properties of 2D monolayers and bilayers of tellurene close related to the multivalency of Te. [22] In this paper, we found that the charge transfer from the central to the outer atoms amounts to 0.18 and 0.04 e in aand β-Se, respectively. Se has the multivalent nature with both metal and nonmetal characteristics as the previously reported. In addition, we have demonstrated that monolayer a-Se possesses a rather high carrier mobility, Selenene has been predicted as a new member of an atomically thin 2D crystalline material family as of last year. With first principle calculations, two different stable phases of selenene, one with the 1T-MoS 2 -like structure (α-Se) and the other with alternating arrangement structure of deformed four-membered and six-membered rings (b-Se) are identified. Further research indicates that monolayer α-Se exhibits excellent bipolar conductivity, possessing rather high hole mobility close to that of graphene,...