Atmospheric-Like Neutron Attenuation During Accelerated Neutron Testing With Multiple Printed Circuit Boards

Cazzaniga, Carlo; Bhuva, B. L.; Bagatin, M.; Gerardin, Simone; Marchese, N; Frost, Christopher

doi:10.1109/tns.2018.2825644

Cited by 9 publications

(2 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…They were installed at a distance of 58 cm and 76 cm from the beam aperture, respectively. The attenuation of the neutron beam in the first board was estimated to be negligible for the material used in the tested boards [37]. Two Keithley Source Measurement Unit (SMU) model 2410s (one channel, up to 1100 V), one for each board, were used to bias the drain and to monitor the total leakage currents as a sum of all devices.…”

Section: B Experimental Methodsmentioning

confidence: 99%

Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies

Martinella

Alía

Stark

et al. 2021

IEEE Trans. Nucl. Sci.

Self Cite

View full text Add to dashboard Cite

Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and the failure in time (FIT) rates at sea level. Enhanced gate and drain leakage were observed in some devices which did not exhibit a destructive failure during the exposure. In particular, a different mechanism was observed for planar and trench gate MOSFETs, the first showing a partial gate rupture with a leakage path mostly between drain and gate, similar to what was previously observed with heavy-ions, while the second exhibiting a complete gate rupture. The observed failure mechanisms and the post irradiation gate stress (PIGS) tests are discussed for the different technologies.

show abstract

Section: B Experimental Methodsmentioning

confidence: 99%

Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies

Martinella

Alía

Stark

et al. 2021

IEEE Trans. Nucl. Sci.

Self Cite

View full text Add to dashboard Cite

show abstract

“…This is a reference monitor developed by the European Space Agency (ESA) [26]. It has been used to characterize the radiation field of space applications [27] and of different radiation facilities [28][29][30][31]. The ESA monitor is based on the detection of SEEs occurring in a set of 4 ICs of a well calibrated 4 Mbit SRAM (Atmel AT60142F), for a total of 16 Mbit.…”

Section: See Measurements With Sramsmentioning

confidence: 99%