2004
DOI: 10.1021/cm031161f
|View full text |Cite
|
Sign up to set email alerts
|

Atmospheric-Pressure Chemical Vapor Deposition of Group IVb Metal Phosphide Thin Films from Tetrakisdimethylamidometal Complexes and Cyclohexylphosphine

Abstract: The dual-source atmospheric-pressure chemical vapor deposition of group IVb metal phosphide films from tetrakisdimethylamido(metal) and cyclohexylphosphine precursors is presented. Deposition took place at low temperatures (<500 °C), and nitrogen and carbon contamination of the films was negligible. The films had typical stoichiometric metal phosphide properties of high electrical conductivity, hardness, and chemical resistivity.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

1
21
1

Year Published

2006
2006
2017
2017

Publication Types

Select...
6
1

Relationship

2
5

Authors

Journals

citations
Cited by 21 publications
(23 citation statements)
references
References 23 publications
1
21
1
Order By: Relevance
“…[13] Recently we reported the first dual-source deposition of TiP films on glass substrates by the APCVD reaction of TiCl 4 with tBuPH 2 , [14] from the reaction of TiCl 4 with a variety of primary phosphanes (RPH 2 where R = Ph, tBu and Cy hex ) [15] and from the reaction of [Ti(NMe 2 ) 4 ] with Cy hex PH 2 . [16] Thereafter, we extended the methodology to deposit GeP using both primary and secondary phosphanes, [17,18] and also to deposit NbP, [19] TaP, [20] CrP, [21] MoP [22] and VP thin films. [23] In addition, SnP films have also been deposited using organophosphane alternatives to PH 3.…”
Section: Introductionmentioning
confidence: 99%
“…[13] Recently we reported the first dual-source deposition of TiP films on glass substrates by the APCVD reaction of TiCl 4 with tBuPH 2 , [14] from the reaction of TiCl 4 with a variety of primary phosphanes (RPH 2 where R = Ph, tBu and Cy hex ) [15] and from the reaction of [Ti(NMe 2 ) 4 ] with Cy hex PH 2 . [16] Thereafter, we extended the methodology to deposit GeP using both primary and secondary phosphanes, [17,18] and also to deposit NbP, [19] TaP, [20] CrP, [21] MoP [22] and VP thin films. [23] In addition, SnP films have also been deposited using organophosphane alternatives to PH 3.…”
Section: Introductionmentioning
confidence: 99%
“…The deposition of transition metal pnictide thin films is a growing area of research, owing mainly to the useful properties of these films, examples being TiN (Carmalt et al, 2002;Newport et al, 2002), ZrN (Potts et al, 2009), TiP (Blackman et al, 2004), TiAs (Thomas, Blackman et al, 2010), CoAs (Senzaki & Gladfelter, 1994;Klingan et al, 1995) and MnAs (Lane et al, 1994). Such films are often grown by chemical vapour deposition (CVD).…”
Section: Commentmentioning
confidence: 99%
“…However, there is even greater control over these parameters due to an additional terminal amine moiety. The enhanced thermal stability of titanium guanidinato analogs was demonstrated through the deposition of TiC x N y films [62], occurring at lower temperatures with less gas-phase decomposition than the tetrakis amino complex Ti(NMe 2 ) 4 [64].…”
Section: Metal Amidinato Guanidinato and Triazenido Complexesmentioning
confidence: 99%