Atom-probe for FinFET dopant characterization

Improved physical models for advanced silicon device processing

“…These authors also demonstrated by device electrical simulations that both drive current and SCE control are very sensitive to sidewall dopant concentration. SIMS measurements [153] and Atom Probe Tomography (APT) data [167] for ion implanted fin structures also revealed more efficient dopant incorporation in the top compared to sidewalls due to complementary incident angles (see Fig. 18(b)), which complicates doping conformality as discussed in the next sub-section.…”

An analytical model accounting for tip shape evolution during atom probe analysis of heterogeneous materials

“…Indeed, while constrained to metallic materials during the first few decades of work with APT, complex nanoelectronic device analyses are now routinely performed [1,2] with the introduction of laser pulsing [3][4][5][6] and wide field of view atom probe [7][8][9]. However, the standard tomographic reconstruction protocol remains very close to the original one developed at the early stage of the technique [10].…”

Methodology exploration of specimen preparation for atom probe tomography from nanowires

“…Capable of mapping 3D composition and position of identities in atom scale with single atom depth resolution and 0.2 nm lateral resolution, Atom Probe Tomography is regarded as one of the most powerful instrument to reveal chemistry and structure of materials [10][11][12][13][14][15][16], including semiconductors [17][18][19]. Freestanding nanowires on substrates have an ideal needle shape for APT analysis, but the difficulties of nanowires specimen preparation for APT lie in how to isolate a single nanowire and mount it in a correct orientation and position with regard to the local electrode in Atom Probe Microscopy.…”