Highly sensitive photodetection even approaching the single-photon level is critical to many important applications. Graphene-based hybrid phototransistors are particularly promising for high-sensitivity photodetection because they have high photoconductive gain due to the high mobility of graphene. Given their remarkable optoelectronic properties and solution-based processing, colloidal quantum dots (QDs) have been preferentially used to fabricate graphene-based hybrid phototransistors. However, the resulting QD/graphene hybrid phototransistors face the challenge of extending the photodetection into the technologically important mid-infrared (MIR) region. Here, we demonstrate the highly sensitive MIR photodetection of QD/graphene hybrid phototransistors by using plasmonic silicon (Si) QDs doped with boron (B). The localized surface plasmon resonance (LSPR) of B-doped Si QDs enhances the MIR absorption of graphene. The electron-transition-based optical absorption of B-doped Si QDs in the ultraviolet (UV) to near-infrared (NIR) region additionally leads to photogating for graphene. The resulting UV-to-MIR ultrabroadband photodetection of our QD/graphene hybrid phototransistors features ultrahigh responsivity (up to ∼10 A/W), gain (up to ∼10), and specific detectivity (up to ∼10 Jones).

After a decade of intensive research on two-dimensional (2D) materials inspired by the discovery of graphene, the field of 2D electronics has reached a stage with booming materials and device architectures. However, the efficient integration of 2D functional layers with three-dimensional (3D) systems remains a significant challenge, limiting device performance and circuit design. In this review, we investigate the experimental efforts in interfacing 2D layers with 3D materials and analyze the properties of the heterojunctions formed between them. The contact resistivity of metal on graphene and related 2D materials deserves special attention, while the Schottky junctions formed between metal/2D semiconductor or graphene/3D semiconductor call for careful reconsideration of the physical models describing the junction behavior. The combination of 2D and 3D semiconductors presents a form of p-n junctions that have just marked their debut. For each type of the heterojunctions, the potential applications are reviewed briefly.

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High-performance photodetectors operating over a broad wavelength range from ultraviolet, visible, to infrared are of scientific and technological importance for a wide range of applications. Here, a photodetector based on van der Waals heterostructures of graphene and its fluorine-functionalized derivative is presented. It consistently shows broadband photoresponse from the ultraviolet (255 nm) to the mid-infrared (4.3 µm) wavelengths, with three orders of magnitude enhanced responsivity compared to pristine graphene photodetectors. The broadband photodetection is attributed to the synergistic effects of the spatial nonuniform collective quantum confinement of sp domains, and the trapping of photoexcited charge carriers in the localized states in sp domains. Tunable photoresponse is achieved by controlling the nature of sp sites and the size and fraction of sp /sp domains. In addition, the photoresponse due to the different photoexcited-charge-carrier trapping times in sp and sp nanodomains is determined. The proposed scheme paves the way toward implementing high-performance broadband graphene-based photodetectors.

Among light-based free-space communication platforms, mid-infrared (MIR) light pertains to important applications in biomedical engineering, environmental monitoring, and remote sensing systems. Integrating MIR generation and reception in a network using two identical devices is vital for the miniaturization and simplification of MIR communications. However, conventional MIR emitters and receivers are not bidirectional due to intrinsic limitations of low performance and often require cryogenic cooling. Here, we demonstrate that macroscopic graphene fibres (GFs) assembled from weakly-coupled graphene layers allow room-temperature MIR detection and emission with megahertz modulation frequencies due to the persistence of photo-thermoelectric effect in millimeter-length and the ability to rapidly modulate gray-body radiation. Based on the dual-functionality of GFs, we set up a system that conducts bidirectional data transmission by switching modes between two identical GFs. The room-temperature operation of our systems and the potential to produce GFs on industrial textile-scale offer opportunities for simplified and wearable optical communications.