Atomic and electronic structures of novel silicon surface structures

Abstract

The modification of silicon surfaces is presently of great interest to the semiconductor device community. Three distinct areas are the subject of inquiry: first, modification of the silicon electronic structure; second, passivation of the silicon surface; and third, functionalization of the silicon surface. It is believed that surface modification of these types will vii *.. Vlll has been at my side throughout my graduate career and my son, Casey Jeffrey, has really livened up the end. My parents, in-laws, and grandparents have provided support when the going got tough. I appreciate the help that was provided by my brothers and sister. I was greatly helped by the friendship of Ed Hanson and Matt Linford.

Comparison of the equivalent width, the autocorrelation width, and the variance as figures of merit for XPS narrow scans

“…annealed at 700 • C (Si(1 1 1) C 5 /700 • ). In general agreement with previously published results [16][17][18], EW XPS showed no signicant difference between the Si(1 1 1) H and Si(1 1 1) C 5 samples, while the EW XPS was significantly higher for the Si(1 1 1) C 5 /700 • material because of the added contribution to the spectrum from the Si(1 1 1) (7 × 7) reconstruction. The PE max values of these three spectra were constant to within 0.1 eV because all the spectra were dominated by the bulk Si peak.…”

Atomic-Scale Mechanistic Study of Iodine/Alcohol Passivated Si(100)

“…Analyses were performed at BL 8-1 and BL 10-1 of the Stanford Synchrotron Radiation Laboratory. The fitting procedure for the spectra is described in a previous study 2 . The monolayer coverages of surface species were determined from the photoelectron signal, accounting for exponential attenuation of the electrons from the bulk, as described by Himpsel,et.…”