Atomic composition, structure, and electrical properties of In1-xGaxSb films deposited by magnetron sputtering

Giulian, Raquel; Bolzan, Charles Airton; Rossetto, Leandro T.; Andrade, Ankilma do Nascimento; Schoffen, Júlio R.; Araujo, Leandro; Boudinov, H.

doi:10.1016/j.tsf.2020.138213

Cited by 5 publications

(1 citation statement)

References 27 publications

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“…And the band gap can be increased from 0.18 eV (InSb) to 0.725 eV (GaSb) [4,5], and the cutoff wavelength can be adjusted from 1.7 μm (GaSb) to 7.3 μm (InSb) [6]. Therefore, GaInSb crystals can be more widely used in epitaxial substrate materials [7], quantum well lasers [8], high electron mobility transistors [9], thermoelectric materials [10,11], as well as infrared (IR) and near-infrared (NIR) devices [12][13][14][15] and other fields.…”

Section: Introductionmentioning

confidence: 99%

Improving the quality and properties of GaInSb crystal with Al doping

Wang,

Liu,

Liu

et al. 2024

Phys. Scr.

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GaInSb crystal is a promising substrate material that can be used to prepare various high-performance devices. Ga0.86In0.14Sb and Al-doped Ga0.86In0.14Sb (Ga0.86In0.14Sb:Al) crystals were grown with the vertical Bridgman method (VB). The doping concentration of aluminum (Al) is 0.005 - 0.015 molar ratio. The effect of Al doping on the structure and properties of Ga0.86In0.14Sb crystal was studied. The results indicated that Al doping significantly reduced the segregation of indium (In) component in the crystal, with the radial segregation reaching a minimum of 0.051 mol%/mm and the axial segregation reaching a minimum of 0.067 mol%/mm. The doping of Al also improved the crystal quality (lattice structure integrity) of Ga0.86In0.14Sb. The passivation and compensation of Al on the intrinsic defects of Ga0.86In0.14 Sb crystal significantly inhibited the generation of dislocation, of which density decreased to 2.461 × 103 cm-2. The doping of Al as the equivalent electron element of gallium (Ga) and In not only made the carrier concentration increase to 1.848 × 1018 cm-3 but also made the carrier mobility increase to 1.982 × 103 cm2/(V·s), resulting in the resistivity decreasing to 1.261 × 10−3 Ω·cm.

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