Atomic diffusion and band lineups at In0.53Ga0.47As-on-InP heterointerfaces

Abstract

We have used secondary ion mass spectrometry ͑SIMS͒, cathodoluminescence spectroscopy ͑CLS͒, and an analysis of secondary electron thresholds ͑SETs͒ to determine how extended anion soaks during molecular beam epitaxial ͑MBE͒ growth transitions affect band lineups at the lattice-matched In 0.53 Ga 0.47 As-on-InP interface. Growth transitions consisting of 20-150 As soaks result in SIMS-measured interfacial broadening of up to 8 nm. By monitoring SETs across an in situ cleaved InP/In 0.53 Ga 0.47 As/InP double heterostructures, we measure a type I conduction-band offset of 190± 30 meV at an abrupt InGaAs-on-InP interface. For diffused structures exposed to long As soak times, we observe an effective decrease of ⌬E c by up to 210± 40 meV. The changes in InGaAs and InP CL intensities are consistent with both the SET-measured decrease in conduction-band offset and an increase in nonradiative recombination at the diffused InGaAs-on-InP interface.

Influence of doping level and surface states in tunneling spectroscopy of an In0.53Ga0.47As quantum well grown on Vergel1, Tadjine2, Notot3 et al. 2019Phys. Rev. Materials6140View full textAdd to dashboardCite

“…[20]. Based on the literature [21], we assumed a conduction-band offset between In 0.53 Ga 0.47 As and InP of 204 meV and an infinite potential barrier at the vacuum/In 0.53 Ga 0.47 As interface. Free surfaces were saturated by pseudohydrogen atoms described by a single s orbital.…”

Atomic diffusion and interface electronic structure at In0.49Ga0.51P∕GaAs heterojunctions

“…3,4 InGaP is also of interest for heterojunction bipolar transistors 5 due to its low conduction band offset; however, values from ϳ30 to 220 meV are reported due to long range ordering. Previously, we observed pronounced electronic changes at InGaAs/ InP junctions as a function of growth-transition anion soak time, 13,14 and electronic changes as a function of interface chemistry at metalsemiconductor junctions are well known. 11,12 Achieving the abrupt interfaces necessary for III-V based devices often presents a challenge in cases where both group-III and group-V sources must be switched during in-terface growth.…”

Atomic diffusion and electronic structure in Al0.52In0.48P∕GaAs heterostructures

“…This is in part due to an indirect band gap for x Ͼ 0.44, which limits its usefulness as a direct optical emitter when lattice matched to GaAs ͑x = 0.52͒. [10][11][12][13][14][15][16][17] Despite these challenges, Al x In 1−x P, along with the quaternary ͑Al y Ga 1−y ͒ x In 1−x P, have attracted interest for optoelectronic devices. 2, 3 Contributing to the lack of understanding about AlInP is its tendency to exhibit strong long range ordering, the degree of which is known to affect the band gap and ⌬E c , and which often results in varying literature reports for these values.…”