Atomic force microscopy and Raman spectroscopy study of the early stages of carbon nanowall growth by dc plasma-enhanced chemical vapor deposition

Yoshimura, Akihiko; Yoshimura, Hirofumi; Shin, Seog Chul; Kobayashi, Ken-ichi; Tanimura, Makoto; Tachibana, Masaru

doi:10.1016/j.carbon.2012.02.026

Cited by 20 publications

(13 citation statements)

References 21 publications

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“…The coalescence of nanoislands and further growth This manuscript got published in RSC Adv., 2015,5, 91922-91931 web link : pubs.rsc.org/en/content/articlelanding/2015/ra/c5ra20820c causes stress at nanographitic grain boundaries and whose release favors nucleation of carbon in the vertical direction. 37 Zhao et al 28 reported that the nucleation of vertical growth could start either from buffer layer or from the surface carbon onions. The plasma parameter such as feedstock gas compositions then decides whether the growth of vertical structure to be continued or etched out.…”

Section: Discussionmentioning

confidence: 99%

Flipping growth orientation of nanographitic structures by plasma enhanced chemical vapor deposition

et al. 2015

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Nanographitic structures (NGSs) with multitude of morphological features are grown on SiO2/Si substrates by electron cyclotron resonance -plasma enhanced chemical vapor deposition (ECR-PECVD). CH4 is used as source gas with Ar and H2 as dilutants. Field emission scanning electron microscopy, high resolution transmission electron microscopy (HRTEM) and Raman spectroscopy are used to study the structural and morphological features of the grown films. Herein, we demonstrate, how the morphology can be tuned from planar to vertical structure using single control parameter namely, dilution of CH4 with Ar and/or H2. Our results show that the competitive growth and etching processes dictate the morphology of the NGSs. While Ar-rich composition favors vertically oriented graphene nanosheets, H2-rich composition aids growth of planar films.Raman analysis reveals dilution of CH4 with either Ar or H2 or in combination helps to improve the structural quality of the films. Line shape analysis of Raman 2D band shows nearly symmetric Lorentzian profile which confirms the turbostratic nature of the grown NGSs. Further, this aspect is elucidated by HRTEM studies by observing elliptical diffraction pattern. Based on these experiments, a comprehensive understanding is obtained on the growth and structural properties of NGSs grown over a wide range of feedstock compositions.This manuscript got published in RSC Adv., 2015,5, 91922-91931 web link : pubs.rsc.org/en/content/articlelanding/2015/ra/c5ra20820c

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Section: Discussionmentioning

confidence: 99%

Flipping growth orientation of nanographitic structures by plasma enhanced chemical vapor deposition

et al. 2015

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“…In this work, the strong D band at 1344 cm −1 indicated the defects and impurities of atoms in CNTs. Herein, the sharp G band with lower intensity relatively to the D band was located at 1600 cm −1 which also showed the disorder graphitized structures [37–39]. Seen from Fig.…”

Section: Resultsmentioning

confidence: 96%

High Current Emission from Patterned Aligned Carbon Nanotubes Fabricated by Plasma-Enhanced Chemical Vapor Deposition

Cui¹,

Chen²,

Yang³

et al. 2015

Nanoscale Res Lett

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Vertically, carbon nanotube (CNT) arrays were successfully fabricated on hexagon patterned Si substrates through radio frequency plasma-enhanced chemical vapor deposition using gas mixtures of acetylene (C2H2) and hydrogen (H2) with Fe/Al2O3 catalysts. The CNTs were found to be graphitized with multi-walled structures. Different H2/C2H2 gas flow rate ratio was used to investigate the effect on CNT growth, and the field emission properties were optimized. The CNT emitters exhibited excellent field emission performance (the turn-on and threshold fields were 2.1 and 2.4 V/μm, respectively). The largest emission current could reach 70 mA/cm2. The emission current was stable, and no obvious deterioration was observed during the long-term stability test of 50 h. The results were relevant for practical applications based on CNTs.

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“…In final stage, the coalescence of nanoislands and growth causes stress at NG grain boundaries, whose release favors nucleation and further growth of graphene nanosheets in the vertical direction [31]. The nucleation of vertical growth could start either from the defective NG buffer layer or from the surface carbon onions [3].…”

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confidence: 99%

Influence of substrate on nucleation and growth of vertical graphene nanosheets

Ghosh

Ganesan

Polaki

et al. 2015

Applied Surface Science

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Atomic force microscopy and Raman spectroscopy study of the early stages of carbon nanowall growth by dc plasma-enhanced chemical vapor deposition

Cited by 20 publications

References 21 publications

Flipping growth orientation of nanographitic structures by plasma enhanced chemical vapor deposition

Flipping growth orientation of nanographitic structures by plasma enhanced chemical vapor deposition

High Current Emission from Patterned Aligned Carbon Nanotubes Fabricated by Plasma-Enhanced Chemical Vapor Deposition

Influence of substrate on nucleation and growth of vertical graphene nanosheets

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