Atomic force microscopy of lead iodide crystal surfaces

Morphology-controlled synthesis of lead iodine compounds from lead foils and iodine

“…As an intrinsic wide-band-gap (E g 42 eV) semiconductor material [7], lead iodide has been intensively investigated because of its attractive optical and electrical properties and specific technological features including its large applicability, at room temperature, as photocell, X-ray and g-ray detectors [8][9][10][11][12][13]. Lead iodide can be synthesized by many synthesis methods.…”

Gap energy studied by optical transmittance in lead iodide monocrystals grown by Bridgman's Method

“…Lead iodide crystals has been studied as a very promising material with large technological applicability as room temperature nuclear radiation detectors [1][2][3] . Lead iodide (PbI 2 ) is a wide band gap energy semiconductor (E g = 2.2 eV) very similar to mercuric iodide (HgI 2 ) 4 , but it presents more attractive physical properties to be used as a substrate for the fabrication of detectors.…”

“…Lead iodide (PbI 2 ) is a wide band gap energy semiconductor (E g = 2.2 eV) very similar to mercuric iodide (HgI 2 ) 4 , but it presents more attractive physical properties to be used as a substrate for the fabrication of detectors. For example, its lower vapor pressure compared to the HgI 2 contributes for a higher stability as detectors 1 . Devices manufactured with this material show good performance also at temperatures higher than room temperature (about 100 °C) and for long periods (3 months) 2 .…”

Thermal diffusivity of lead iodide

“…8,14,15 The detector leakage current (ld) is proportional to the conductivity of the material. As good detectors are expected to have low value of ld, the electrical conductivity of this material would also be highly desirable.…”