Atomic layer deposited Al2O3 as a protective overlayer for focused ion beam preparation of plan-view STEM samples

Gurrentz, Joseph M.; Jarvis, Karalee; Gearba-Dolocan, Ioana R.; Rose, Michael J.

doi:10.1016/j.ultramic.2022.113562

Cited by 1 publication

(1 citation statement)

References 54 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[20] Various processes have been studied for ALD Al 2 O 3 over decades and trimethylaluminum-H 2 O process is a well-established. [21][22][23][24][25][26] ALD Al 2 O 3 is used in several applications, including solar cells, [27] passivation, [28] protective material [29] and as gas diffusion barriers in food packaging. [30][31][32] Al 2 O 3 films obtained by the ALD process are uniform and have leakage current density up to about 1.1 × 10 −6 A cm −2 at top gate electric field E TG = 1 MV cm −1 (15 nm film), [33] while the dielectric constant is generally between 9 and 11.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Boron‐Doped Al₂O₃ Dielectric Films

Vehkamäki

Chundak

et al. 2023

Adv Materials Inter

View full text Add to dashboard Cite

This paper presents preparation of boron‐doped Al2O3 thin films by atomic layer deposition (ALD) using phenylboronic acid (PBA) and trimethylaluminum (TMA) as precursors. Deposition temperatures of 160–300 °C are studied, giving a maximum growth per cycle (GPC) of 0.77 Å at 200 °C. Field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) are used to study the surface morphology and roughness of the films. Attenuated total reflectance Fourier transform infrared spectroscopy (ATR‐FTIR), Time‐of‐flight elastic recoil detection analysis (ToF‐ERDA), and X‐ray photoelectron spectroscopy (XPS) are used to study the composition of the films. An annealing process is carried out at 450 °C for 1 h to investigate its effect on the elemental composition and electrical properties of the boron‐doped Al2O3 thin films. The boron‐doped Al2O3 70 nm thick film deposited at 200 °C has a boron content of 3.7 at.% with low leakage current density (10−9 to 10−6 A cm−2) when the film thickness is 70 nm. The dielectric constant of this boron doped Al2O3 film is 5.18.

show abstract