Handbook of Thin Film Deposition 2018
DOI: 10.1016/b978-0-12-812311-9.00011-6
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Atomic Layer Deposition

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Cited by 18 publications
(3 citation statements)
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“…In the latter case, there are quite a few methods followed in the literature, providing modification of the surface of the samples under study, either in the category of physical (e.g., sputtering, ion plating etc) or chemical (pyrolysis, plasma‐enhanced, etc) vapor deposition, 33–35 aiming to improve barrier properties and enhance antimicrobial activity. Among those, atomic layer deposition (ALD) was found to excel, mainly because it is based on sequential self‐limiting reactions, thus providing uniformity and conformality of the coating across the substrate area, combined with the ability for deposition at temperatures suitable for polymer substrates 36–40 . Up to date, only a handful of ALD deposited PLA‐based systems are considered in literature, which involve aluminum oxide (Al 2 O 3 ), 41–45 titanium oxide (TiO 2 ), 46 and zinc oxide (ZnO) 47,48 as the inorganic coating.…”
Section: Introductionmentioning
confidence: 99%
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“…In the latter case, there are quite a few methods followed in the literature, providing modification of the surface of the samples under study, either in the category of physical (e.g., sputtering, ion plating etc) or chemical (pyrolysis, plasma‐enhanced, etc) vapor deposition, 33–35 aiming to improve barrier properties and enhance antimicrobial activity. Among those, atomic layer deposition (ALD) was found to excel, mainly because it is based on sequential self‐limiting reactions, thus providing uniformity and conformality of the coating across the substrate area, combined with the ability for deposition at temperatures suitable for polymer substrates 36–40 . Up to date, only a handful of ALD deposited PLA‐based systems are considered in literature, which involve aluminum oxide (Al 2 O 3 ), 41–45 titanium oxide (TiO 2 ), 46 and zinc oxide (ZnO) 47,48 as the inorganic coating.…”
Section: Introductionmentioning
confidence: 99%
“…Among those, atomic layer deposition (ALD) was found to excel, mainly because it is based on sequential self-limiting reactions, thus providing uniformity and conformality of the coating across the substrate area, combined with the ability for deposition at temperatures suitable for polymer substrates. [36][37][38][39][40] Up to date, only a handful of ALD deposited PLA-based systems are considered in literature, which involve aluminum oxide (Al 2 O 3 ), [41][42][43][44][45] titanium oxide (TiO 2 ), 46 and zinc oxide (ZnO) 47,48 as the inorganic coating.…”
Section: Introductionmentioning
confidence: 99%
“…Several synthesis techniques to produce ZnO films include sol-gel [10], pulsed layer deposition [11], chemical bath deposition [12], radiofrequency magnetron sputtering [13], spray pyrolysis [14], and atomic layer deposition (ALD) [15]. ALD is a precise deposition technique particularly attractive, in which the growth process takes place in the gas phase, where a sequence of self-limited surface reactions are repeated a specific number of times [16]. Through this growth mechanism, this technique allows thickness control, which can be accurately manipulated since it depends on the number of deposition cycles.…”
Section: Introductionmentioning
confidence: 99%