Atomic Layer Deposition for High‐Efficiency Crystalline Silicon Solar Cells

Macco, Bart; Loo, Bas W. H. van de; Kessels, W.M.M.

doi:10.1002/9783527694822.ch2

Cited by 16 publications

(12 citation statements)

References 184 publications

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“…For this application to be successful, a sufficiently low contact resistivity of passivating ZnO with c-Si will be a prerequisite. 47,48 Finally, it is expected that the approach and insights presented in this work will be more generally applicable and can aid the development of other (emerging) surface passivation and passivating contact materials.…”

Section: Discussionmentioning

confidence: 92%

Silicon surface passivation by transparent conductive zinc oxide

Loo

Macco

Melskens

et al. 2019

Journal of Applied Physics

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DOI to the publisher's website. • The final author version and the galley proof are versions of the publication after peer review. • The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. • Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal. If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement:

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Section: Discussionmentioning

confidence: 92%

Silicon surface passivation by transparent conductive zinc oxide

Loo

Macco

Melskens

et al. 2019

Journal of Applied Physics

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“…Doping was introduced in a supercycle fashion, in which an integer n ZnO ALD cycles was alternated by one DMAI cycle [53]. The cycle ratio n was used to accurately control the Al doping level [3,54]. Note that our supercycle recipes were designed such that one supercycle consists of n/2 ZnO cycles, one Al dopant cycle, followed by n/2 ZnO cycles.…”

Section: Methodsmentioning

confidence: 99%

“…the contact resistivity ρ c should be low. At the same time, recombination of minority carriers should be suppressed, thus enabling a low recombination parameter J 0 [2][3][4][5][6][7]. Together, these two parameters define the charge-carrier selectivity of the contacting scheme.…”

Section: Introductionmentioning

confidence: 99%

Atomic-layer-deposited Al-doped zinc oxide as a passivating conductive contacting layer for n+-doped surfaces in silicon solar cells

Macco

Loo

Dielen

et al. 2021

Solar Energy Materials and Solar Cells

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published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User

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“…So far, there have been many reports on how to optimize the deposition of Al 2 O 3 thin films, such as using trimethylaluminum (TMA, Al 2 (CH 3 ) 6 ) and O 3 to deposit Al 2 O 3 thin films [22,23]. Dueñas et al reported the electrical properties of Al 2 O 3 -metal-insulator semiconductor structures prepared by ALD using AlCl 3 and H 2 O [24].…”

Section: Introductionmentioning

confidence: 99%

Study on Annealing Process of Aluminum Oxide Passivation Layer for PERC Solar Cells

Huang

Chuang

2021

Coatings

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In this study, Atomic Layer Deposition (ALD) equipment was used to deposit Al2O3 film on a p-type silicon wafer, trimethylaluminum (TMA) and H2O were used as precursor materials, and then the post-annealing process was conducted under atmospheric pressure. The Al2O3 films annealed at different temperatures between 200–500 °C were compared to ascertain the effect of passivation films and to confirm the changes in film structure and thickness before and after annealing through TEM images. Furthermore, the negative fixed charge and interface defect density were analyzed using the C-V measurement method. Photo-induced carrier generation was used to measure the effective minority carrier lifetime, the implied open-circuit voltage, and the effective surface recombination velocity of the film. The carrier lifetime was found to be the longest (2181.7 μs) for Al2O3/Si post-annealed at 400 °C. Finally, with the use of VHF (40.68 MHz) plasma-enhanced chemical vapor deposition (PECVD) equipment, a silicon nitride (SiNx) film was plated as an anti-reflection layer over the front side of the wafer and as a capping layer on the back to realize a passivated emitter and rear contact (PERC) solar cell with optimal efficiency up to 21.54%.

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Atomic Layer Deposition for High‐Efficiency Crystalline Silicon Solar Cells

Cited by 16 publications

References 184 publications

Silicon surface passivation by transparent conductive zinc oxide

Silicon surface passivation by transparent conductive zinc oxide

Atomic-layer-deposited Al-doped zinc oxide as a passivating conductive contacting layer for n+-doped surfaces in silicon solar cells

Study on Annealing Process of Aluminum Oxide Passivation Layer for PERC Solar Cells

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