Atomic layer deposition of Er-doped yttrium aluminum gallium garnet nanofilms with tunable crystallization and electroluminescence properties

Abstract

Polycrystalline erbium doped Y3(AlxGa1-x)5O12 (Er-YAGG) nanofilms with various Al/Ga compositions are deposited on silicon using atomic layer deposition followed by annealing at different temperatures. The Al/Ga ratios with the corresponding...

Er‐Doped MgAl2O4 Nanofilms Enabling Highly Efficient Near‐Infrared Electroluminescence from the Silicon‐Based MOS Devices Fabricated by Atomic Layer Deposition

“…[56] The corresponding EQEs, PEs, and Er 3+ doping concentrations of silicon-based EL devices using different oxides that have been reported in the literature are listed in Table S2 (Supporting Information). [9,47,[52][53][54][57][58][59][60][61][62][63][64][65][66][67][68] In comparison with other oxide matrix materials, the EL performance of MAO:Er devices in this work exhibits obviously higher EQE and PE than most of other results, second only to the amorphous Ga 2 O 3 :Er devices in our previous report, supplying a potential luminescent material for light amplification and even light sources in lasers.…”

“…[51] The lower refractive index of MAO:Er (≈1.68) compared with that of Y 3 Ga 5 O 12 :Er (YGG:Er, ≈1.88) and ZnGa 2 O 4 :Er (ZGO:Er, ≈1.89) could reduce the self-absorption of crystalline nanofilms, and significantly increase the light extraction efficiency and the emission efficiencies in comparison with the previous results. [52][53][54] With the increase of the bias voltage and injection current, the EQE increases to 31% due to the improvement in the kinetic energy and collision possibility of the injected electrons. The EQEs are approximately two orders of magnitude higher than that of ZGO:Er spinel MOSLEDs.…”