Atomic layer deposition of germanium-doped zinc oxide films with tuneable ultraviolet emission

Chalker, Paul R.; Marshall, Paul; King, Peter; Dawson, Karl; Romani, S.; Williams, Paul A.; Ridealgh, J.A.; Rosseinsky, Matthew J.

doi:10.1039/c2jm31391j

Cited by 34 publications

(38 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The carrier mobility ( Figure 2 ) decreases as the doping level increases, and this could be due to ionised impurity and possibly grain boundary scattering caused by the grain size reduction. The effect of doping concentration on resistivity (initial decrease followed by an increase), is widely reported for other doped ZnO systems, such as ZnO:Al [ 16 ], ZnO:Ge [ 13 ], ZnO:Ga [ 20 ] and ZnO:Ni [ 42 ]. Having established the Zr doping level that provides the lowest resistivity, the doping level was fixed at 4.8 at.% and the effects of film thickness were investigated.…”

Section: Resultsmentioning

confidence: 99%

“…The growth rates of ZnO and ZrO 2 individually at 200 °C were 1.87 and 0.65 Å/cycle respectively. Zr doped ZnO with target doping ratios between 0 and ~10 at.% were deposited using an ALD delta doping methodology similar to the one reported by Chalker et al [ 13 ]. As illustrated in Figure 1 , ZnO multilayers were deposited by repeated ALD cycles, interspersed by one ALD cycle of ZrO 2 .…”

Section: Methodsmentioning

confidence: 99%

“…The dopants used in ZnO should be shallow donors that provide extra ionized electrons. Dopants such as B [ 6 , 7 ], In [ 8 , 9 ], Co [ 10 ], Zr [ 11 , 12 ], Ge [ 13 ], Hf [ 14 ], Sn [ 15 ] have been studied, while the most common dopants are Al [ 16 , 17 ] and Ga [ 3 , 18 , 19 , 20 ]. The reported electrical and optical properties for doped ZnO are being improved by using different dopants in order to compete with ITO, which has a resistivity in the order of 10 -4 Ω·cm and transparency ≥85% [ 21 ].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

The Effects of Zr Doping on the Optical, Electrical and Microstructural Properties of Thin ZnO Films Deposited by Atomic Layer Deposition

et al. 2015

View full text Add to dashboard Cite

Transparent conducting oxides (TCOs), with high optical transparency (≥85%) and low electrical resistivity (10−4 Ω·cm) are used in a wide variety of commercial devices. There is growing interest in replacing conventional TCOs such as indium tin oxide with lower cost, earth abundant materials. In the current study, we dope Zr into thin ZnO films grown by atomic layer deposition (ALD) to target properties of an efficient TCO. The effects of doping (0–10 at.% Zr) were investigated for ~100 nm thick films and the effect of thickness on the properties was investigated for 50–250 nm thick films. The addition of Zr4+ ions acting as electron donors showed reduced resistivity (1.44 × 10−3 Ω·cm), increased carrier density (3.81 × 1020 cm−3), and increased optical gap (3.5 eV) with 4.8 at.% doping. The increase of film thickness to 250 nm reduced the electron carrier/photon scattering leading to a further reduction of resistivity to 7.5 × 10−4 Ω·cm and an average optical transparency in the visible/near infrared (IR) range up to 91%. The improved n-type properties of ZnO: Zr films are promising for TCO applications after reaching the targets for high carrier density (>1020 cm−3), low resistivity in the order of 10−4 Ω·cm and high optical transparency (≥85%).

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The Effects of Zr Doping on the Optical, Electrical and Microstructural Properties of Thin ZnO Films Deposited by Atomic Layer Deposition

et al. 2015

View full text Add to dashboard Cite

show abstract

“…The high carrier density in the impurity-doped ZnO film will slightly increase the band gap due to the Burstein–Moss effect [ 1 ]. N-type dopants that are commonly used in ZnO are Al [ 2 , 3 , 4 ] and Ga [ 5 , 6 , 7 , 8 ], while trials on B [ 9 , 10 ], In [ 11 , 12 ], Ge [ 13 ], Ti [ 14 ], Zr [ 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 ], and Hf [ 27 ] are also reported. Zirconium ion dopant attracts worldwide attention due to its physical nature.…”

Section: Introductionmentioning

confidence: 99%

Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition

Zhao

et al. 2016

Materials

View full text Add to dashboard Cite

The 4 at. % zirconium-doped zinc oxide (ZnO:Zr) films grown by atomic layer deposition (ALD) were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA) treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV–vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350–550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition.

show abstract

“…Significant progress has been made on the screening and selection of high -k gate dielectrics, understanding their physical properties, and their integration into CMOS technology [13,14,15,16,17,18,19,20]. Now it is recognized that a large family of oxide-based materials emerges as candidates to replace SiO 2 gate dielectrics in advanced CMOS applications [21,22,23,24,25,26]. Among them are cerium oxide CeO 2 [27], cerium zirconate CeZrO 4 [28], gadolinium oxide Gd 2 O 3 [29], erbium oxide Er 2 O 3 [30], neodymium oxide Nd 2 O 3 [31], aluminum oxide Al 2 O 3 [32], lanthanum aluminum oxide LaAlO 3 [33], lanthanum oxide La 2 O 3 [34], yttrium oxide Y 2 O 3 [35], tantalum pentoxide Ta 2 O 5 [36], titanium dioxide TiO 2 [37], zirconium dioxide ZrO 2 [38], lanthanum doped zirconium oxide La x Zr 1 −x O 2−δ [39], hafnium oxide HfO 2 [40], HfO 2 -based oxides La 2 Hf 2 O 7 [41], Ce x Hf 1 −x O 2 [42], hafnium silicate HfSi x O y [43], and rare-earth scandates LaScO 3 [44], GdScO 3 [45], DyScO 3 [46], and SmScO 3 [47].…”

Section: Introductionmentioning

confidence: 99%

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

Zhao

et al. 2014

Materials

View full text Add to dashboard Cite

Oxide materials with large dielectric constants (so-called high-k dielectrics) have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). A novel characterization (pulse capacitance-voltage) method was proposed in detail. The pulse capacitance-voltage technique was employed to characterize oxide traps of high-k dielectrics based on the Metal Oxide Semiconductor (MOS) capacitor structure. The variation of flat-band voltages of the MOS structure was observed and discussed accordingly. Some interesting trapping/detrapping results related to the lanthanide aluminum oxide traps were identified for possible application in Flash memory technology. After understanding the trapping/detrapping mechanism of the high-k oxides, a solid foundation was prepared for further exploration into charge-trapping non-volatile memory in the future.

show abstract

Atomic layer deposition of germanium-doped zinc oxide films with tuneable ultraviolet emission

Cited by 34 publications

References 20 publications

The Effects of Zr Doping on the Optical, Electrical and Microstructural Properties of Thin ZnO Films Deposited by Atomic Layer Deposition

The Effects of Zr Doping on the Optical, Electrical and Microstructural Properties of Thin ZnO Films Deposited by Atomic Layer Deposition

Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

Contact Info

Product

Resources

About