Atomic Layer Deposition of Hafnium Silicate Thin Films Using Tetrakis(diethylamido)hafnium and Tris(2-methyl-2-butoxy)silanol

Liu, Jian; Lennard, W. N.; Гончарова, Л. В.; Landheer, D.; Wu, Xiaohua; Rushworth, S.; Jones, Anthony

doi:10.1149/1.3137053

Cited by 21 publications

(9 citation statements)

References 33 publications

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“…The detailed growth procedure has been described previously. [18] ALD utilizes the self-limiting reaction mechanism between gaseous precursors and the surface species to produce a thin film one atomic layer at a time. [20] During a growth cycle, each precursor was introduced separately into the deposition chamber.…”

Section: Methodsmentioning

confidence: 99%

Surface-directed spinodal decomposition in the pseudobinary alloy (HfO2)x(SiO2)1−x

Liu

Lennard

et al. 2010

Journal of Applied Physics

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Surface-directed spinodal decomposition in the pseudobinary alloy (HfO2)x(SiO2)1−x Liu, J.; Wu, X.; Lennard, W Hf silicate films ͑HfO 2 ͒ 0.25 ͑SiO 2 ͒ 0.75 with thicknesses in the range 4-20 nm were grown on silicon substrate by atomic layer deposition at 350°C. Hf distributions in as-grown and 800°C annealed films were investigated by high resolution transmission electron microscopy ͑HRTEM͒, angle-resolved x-ray photoelectron spectroscopy ͑ARXPS͒, and medium energy ion scattering ͑MEIS͒. HRTEM images show a layered structure in films thinner than 8 nm. The ARXPS data also reveal a nonuniform distribution of Hf throughout the film depth. Diffusion of SiO 2 to the film surface after a longer time anneal was observed by MEIS. All these observations provide evidence for surface-directed spinodal decomposition in the pseudobinary ͑HfO 2 ͒ x ͑SiO 2 ͒ 1−x alloy system.

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Section: Methodsmentioning

confidence: 99%

Surface-directed spinodal decomposition in the pseudobinary alloy (HfO2)x(SiO2)1−x

Liu

Lennard

et al. 2010

Journal of Applied Physics

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“…Regarding the use of these alternative approaches, Si-containing compounds are of particular note as SiO 2 itself is often difficult to grow on its own. ,,,,,, A number of studies have successfully deposited Si-containing materials by ALD by using precursor strategies other than supercycles. These strategies include co-dosing multiple precursors simultaneously (Figure b), combining Si with another element in a multiconstituent precursor (Figure c), ,,,, or using an alkoxide-containing precursor with no separate co-reactant (Figure d). ,,− These approaches have allowed for the synthesis of Si-containing compounds that might have otherwise been very challenging to grow via ALD, illustrating that these strategies are worth exploring for other interesting but difficult chemistries. Because of contamination concerns, however, the vast majority of the ternary and quaternary processes outlined above avoid halogenated precursors or precursors containing elements other than C, N, H, and O, which can limit the options for precursor chemistries in multicomponent processes.…”

Section: Overview Of Ternary and Quaternary Ald Processesmentioning

confidence: 99%

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

et al. 2018

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In the past decade, atomic layer deposition (ALD) has become an important thin film deposition technique for applications in nanoelectronics, catalysis, and other areas due to its high conformality on 3-D nanostructured substrates and control of the film thickness at the atomic level. The current applications of ALD primarily involve binary metal oxides, but for new applications there is increasing interest in more complex materials such as doped, ternary, and quaternary materials. This article reviews how these multicomponent materials can be synthesized by ALD, gives an overview of the materials that have been reported in the literature to date, and discusses important challenges. The most commonly employed approach to synthesize these materials is to combine binary ALD cycles in a supercycle, which provides the ability to control the composition of the material by choosing the cycle ratio. Discussion will focus on four main topics: (i) the characteristics, benefits, and drawbacks of the approaches that currently exist for the synthesis of multicomponent materials, with special attention to the supercycle approach; (ii) the trends in precursor choice, process conditions, and characterization methods, as well as underlying motivations for these design decisions; (iii) the distribution of atoms in the deposited material and the formation of specific (crystalline) phases, which is shown to be dependent on the ALD cycle sequence, deposition temperature, and post-deposition anneal conditions; and (iv) the nucleation effects that occur when switching from one binary ALD process to another, with different explanations provided for why the growth characteristics often deviate from what is expected. This paper provides insight into how the deposition conditions (cycle sequence, temperature, etc.) affect the properties of the resultant thin films, which can serve as a guideline for designing new ALD processes. Furthermore, with an extensive discussion on the nucleation effects taking place during the growth of ternary materials, we hope to contribute to a better understanding of the underlying mechanisms of the ALD growth of multicomponent materials.

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“…1-3 They are very suitable for high dielectric constant (high-k) materials, allowing for reduced leakage current and improved equivalent oxide thickness (EOT). 4,5 So far, high-k material research has focused on rare earth-based oxides, [6][7][8][9] mainly Hf-based and their stacked binary alloy gate structures. The most popular of these oxides is HfO 2 , which has a relatively high dielectric constant and a wide energy gap with good thermal stability.…”

Section: Introductionmentioning

confidence: 99%

Characterization of HfO2/La2O3 layered stacking deposited on Si substrate

Cao

Cheng

Jia

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Two-layer and four-layer HfO2/La2O3 stacked structures were grown on a Si substrate by plasma enhanced atomic layer deposition at 200 °C. High resolution transmission electron microscopy results indicated that both films were amorphous with no crystals. Based on atomic force microscopy, the roughness of both films was 0.1 nm. X-ray photoelectron spectroscopy spectra indicated that the interfacial layer of the films was most likely composed of Hf-Si-O and La-Si-O. At a gate bias of |Vg − Vfb| = 1 V, the leakage current densities of the two-layer and four-layer films were 0.02 and 0.01 mA/cm2, respectively. The equivalent oxide thicknesses of the stacked structures were 1.2 and 1.5 nm, respectively. The density of interfacial states between dielectric and substrate was calculated to be 1.71 × 1012 and 1.32 × 1012 eV−1cm−2 for the two- and four-layer films, respectively.

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Atomic Layer Deposition of Hafnium Silicate Thin Films Using Tetrakis(diethylamido)hafnium and Tris(2-methyl-2-butoxy)silanol

Cited by 21 publications

References 33 publications

Surface-directed spinodal decomposition in the pseudobinary alloy (HfO2)x(SiO2)1−x

Surface-directed spinodal decomposition in the pseudobinary alloy (HfO2)x(SiO2)1−x

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

Characterization of HfO2/La2O3 layered stacking deposited on Si substrate

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