Atomic layer deposition of hafnium dioxide thin films from hafnium tetrakis(dimethylamide) and water

Kukli, Kaupo; Pilvi, Tero; Ritala, Mikko; Sajavaara, Timo; Lu, Jun; Leskelä, Markku

doi:10.1016/j.tsf.2005.05.050

Cited by 86 publications

(63 citation statements)

References 45 publications

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“…[1,2] The R s value corrected for this thickness reduction is 0.19 × (1-0.4) ∼ 0.11 nm, which actually compares well with the HfO 2 ALD rates in the literature. [8,22,23] The corrected R s value and the reported HfO 2 ALD rates are about a half of the monolayer thickness of HfO 2 (0.26 nm for (100) face of cubic HfO 2 ). [19] Such a phenomenon (growth saturation at a fraction of monolayer thickness) is often observed in the ALD growth of many kinds of metal oxides.…”

Section: Growth Mechanisms Under Validmentioning

confidence: 83%

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Development of an Automated Vapor/Liquid Hybrid Deposition System to Form High-kDielectrics

Hojo

Xuan

Yasuda

2006

Chem. Vap. Deposition

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Vapor/liquid hybrid deposition (VALID) is a modified atomic layer deposition (ALD) method that combines adsorption of metal precursors from the vapor phase with their hydrolysis from the liquid phase. This paper is a report of the development of an automated VALID apparatus that performs the adsorption/hydrolysis processes with a reasonable throughput. HfO 2 films have been successfully produced with this automated system using Hf(O t C 4 H 9 ) 4 [hafnium tetra-tert-butoxide (HTB)]as the precursor. A brief discussion is given on the contribution of multilayer adsorption of HTB to the observed deposition rates.

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Section: Growth Mechanisms Under Validmentioning

confidence: 83%

“…[19] Such a phenomenon (growth saturation at a fraction of monolayer thickness) is often observed in the ALD growth of many kinds of metal oxides. [8,12,[22][23][24] …”

Section: Growth Mechanisms Under Validmentioning

confidence: 99%

Development of an Automated Vapor/Liquid Hybrid Deposition System to Form High-kDielectrics

Hojo

Xuan

Yasuda

2006

Chem. Vap. Deposition

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“…[13,14] Since the hafnium amides are largely promising (high growth rates) for ALD applications but do have certain drawbacks in terms of limited thermal stability and handling (very reactive), efforts have been made to improve their thermal stability. In the past, we have modified the physico-chemical properties of hafnium amides in an attempt to improve the thermal stability of the parent hafnium amides.…”

Section: Full Papermentioning

confidence: 99%

“…Based on these observations it could be argued that precursor 2 has a reduced sticking effect in comparison to compound 1, however to verify this hypothesis further detailed studies are warranted. Since compound 2 does not typically exhibit ALD characteristics and the film properties using compound 2 have been reported earlier, [14] our focus was on characterizing films obtained only from compound 1 and the results are discussed in the following section.…”

Section: Ald Growth Characteristicsmentioning

confidence: 99%

Atomic Layer Deposition of HfO₂ Thin Films Employing a Heteroleptic Hafnium Precursor

Milanov

Parala

et al. 2012

Chemical Vapor Deposition

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The application of a heteroleptic hafnium amide-guanidinate precursor for the deposition of HfO 2 thin films via a water-assisted atomic layer deposition (ALD) process is demonstrated for the first time. HfO 2 films are grown in the temperature range 100-300 8C using the compound [Hf(NMe 2 ) 2 (NMe 2 -Guan) 2 ] (1). This compound shows self-limiting ALD-type growth characteristics with growth rates of the order of 1.0-1.2 Å per cycle in the temperature range 100-225 8C. The saturation behavior and a linear dependence on film thickness as a function of number of cycles are verified at various temperatures within the ALD window. The as-deposited HfO 2 films are characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM), Rutherford backscattering spectroscopy (RBS), X-ray photoelectron spectroscopy (XPS), and electrical measurements. For a direct comparison of the precursor performance with that of the parent alkyl amide [Hf(NMe 2 ) 4 ] (2), ALD experiments are also performed employing compound 2 under similar process conditions, and in this case no typical ALD characteristics are observed.

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“…To complete this work, we must debug the contact problems by electrochemical and solid-state testing at the University of Illinois. Beyond that, there are several places to enhance the attainable device properties, including changing to a HfO 2 dielectric, which is also a known ALD process; [146] decreasing the template colloid size below 466 nm, and introducing a finer scale porosity by methods such as those presented in the previous chapter.…”

Section: Discussionmentioning

confidence: 99%

Optimized nanoporous materials.

Langham¹,

Jacobs²,

Ong³

et al. 2009

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Nanoporous materials have maximum practical surface areas for electrical charge storage; every point in an electrode is within a few atoms of an interface at which charge can be stored. Metal-electrolyte interfaces make best use of surface area in porous materials. However, ion transport through long, narrow pores is slow. We seek to understand and optimize the tradeoff between capacity and transport. Modeling and measurements of nanoporous gold electrodes has allowed us to determine design principles, including the fact that these materials can deplete salt from the electrolyte, increasing resistance. We have developed fabrication techniques to demonstrate architectures inspired by these principles that may overcome identified obstacles. A key concept is that electrodes should be as close together as possible; this is likely to involve an interpenetrating pore structure. However, this may prove extremely challenging to fabricate at the finest scales; a hierarchically porous structure can be a worthy compromise.

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Atomic layer deposition of hafnium dioxide thin films from hafnium tetrakis(dimethylamide) and water

Cited by 86 publications

References 45 publications

Development of an Automated Vapor/Liquid Hybrid Deposition System to Form High-kDielectrics

Development of an Automated Vapor/Liquid Hybrid Deposition System to Form High-kDielectrics

Atomic Layer Deposition of HfO₂ Thin Films Employing a Heteroleptic Hafnium Precursor

Optimized nanoporous materials.

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Atomic layer deposition of hafnium dioxide thin films from hafnium tetrakis(dimethylamide) and water

Cited by 86 publications

References 45 publications

Development of an Automated Vapor/Liquid Hybrid Deposition System to Form High-kDielectrics

Development of an Automated Vapor/Liquid Hybrid Deposition System to Form High-kDielectrics

Atomic Layer Deposition of HfO2 Thin Films Employing a Heteroleptic Hafnium Precursor

Optimized nanoporous materials.

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Product

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Atomic Layer Deposition of HfO₂ Thin Films Employing a Heteroleptic Hafnium Precursor