Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors

Impact of postdeposition annealing upon film properties of atomic layer deposition-grown Al2O3 on GaN

“…This sort of detrimental effect upon the leakage current occurring because of hydrogen incorporation in the ALD Al 2 O 3 thin films has been already observed in other works. [16][17][18] Here, the influence of the hydrogen-containing oxygen precursor has been studied without additional postdeposition annealing. Kozen et al 18 have reported an increase of the leakage current density with higher hydrogen impurity concentration in Al 2 O 3 .…”

Study of aluminium oxide thin films deposited by plasma-enhanced atomic layer deposition from tri-methyl-aluminium and dioxygen precursors: Investigation of interfacial and structural properties

“…Among them, atomic layer deposition (ALD) was thoroughly studied for the conformal deposition of Al2O3 thin films [15][16][17], emphasizing the use of tri-methyl-aluminium Al(CH3)3 (also called TMA) as an aluminium source and water (H2O) as an oxidant source [18][19][20][21][22][23][24][25]. Nevertheless, other sources such aluminium trichloride (AlCl3) as well as dioxygen (O2) and ozone (O3), were also developed in parallel using plasma-enhanced atomic layer deposition (PE-ALD) in order to reduce the impurity content in the grown Al2O3 film and improve their dielectric properties [24][25][26][27][28].…”

Atomic layer deposition of zirconium dioxide from zirconium tetrachloride and ozone

“…ZrO 2 films have been grown by several water-free ALD processes [21], such as in those based on (C 5 H 5 )Zr(N(CH 3 ) 2 ) 3 and oxygen plasma [7,22], Zr[N(CH 3 ) 2 ] 4 and O 3 [14], Zr[N(CH 3 )(C 2 H 5 )] 4 and O 3 [6,9,11,23], Cp 2 ZrCl 2 and O 3 [13,24], or Zr(NEtMe) 3 (guanNEtMe) and O 3 [25]. Regarding metal halide based and hydrogen-free ALD processes, depositions of Al 2 O 3 from AlCl 3 and O 3 [26], TiO 2 from TiCl 4 and O 3 [27], Ta 2 O 5 from TaCl 5 and O 3 [28], HfO 2 from HfCl 4 and O 3 [29], and HfO 2 from HfI 4 and O 2 [30] have been reported. There is also an implication about the possibility to atomic layer deposition of [29], although the details of the process have remained beyond the scope of that study.…”