“…Significant progress has been made on the screening and selection of high -k gate dielectrics, understanding their physical properties, and their integration into CMOS technology [13,14,15,16,17,18,19,20]. Now it is recognized that a large family of oxide-based materials emerges as candidates to replace SiO 2 gate dielectrics in advanced CMOS applications [21,22,23,24,25,26]. Among them are cerium oxide CeO 2 [27], cerium zirconate CeZrO 4 [28], gadolinium oxide Gd 2 O 3 [29], erbium oxide Er 2 O 3 [30], neodymium oxide Nd 2 O 3 [31], aluminum oxide Al 2 O 3 [32], lanthanum aluminum oxide LaAlO 3 [33], lanthanum oxide La 2 O 3 [34], yttrium oxide Y 2 O 3 [35], tantalum pentoxide Ta 2 O 5 [36], titanium dioxide TiO 2 [37], zirconium dioxide ZrO 2 [38], lanthanum doped zirconium oxide La x Zr 1 −x O 2−δ [39], hafnium oxide HfO 2 [40], HfO 2 -based oxides La 2 Hf 2 O 7 [41], Ce x Hf 1 −x O 2 [42], hafnium silicate HfSi x O y [43], and rare-earth scandates LaScO 3 [44], GdScO 3 [45], DyScO 3 [46], and SmScO 3 [47].…”