2012
DOI: 10.1116/1.4748570
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Atomic layer deposition of Ti-HfO2 dielectrics

Abstract: Titanium-doped hafnium oxide films, TixHf1−xO2−δ, have been deposited with a Ti content of x = 0.1 and x = 0.5, by atomic layer deposition. The TixHf1−xO2−δ growth rate is lower compared with the growth rates of the individual binary oxides; however, the composition of the films is unaffected by the reduced growth rate. An 850  °C spike anneal and a 500  °C 30 min furnace anneal were performed, and the resulting film composition and structure was determined using medium energy ion scattering, x-ray diffraction… Show more

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Cited by 6 publications
(7 citation statements)
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“…This work focused on Hf x Ti 1– x O y films because of potential applications ranging from different electronic devices to optical and scintillator materials. As in a number of cases, ALD has been used for the deposition of Hf x Ti 1– x O y films; ,,, these films as well as the ALD methods usable for the deposition of those are of significant practical interest.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…This work focused on Hf x Ti 1– x O y films because of potential applications ranging from different electronic devices to optical and scintillator materials. As in a number of cases, ALD has been used for the deposition of Hf x Ti 1– x O y films; ,,, these films as well as the ALD methods usable for the deposition of those are of significant practical interest.…”
Section: Introductionmentioning
confidence: 99%
“…In previous ALD studies, amorphous Hf x Ti 1−x O y films have been obtained in x ranges of 0.30−0.85, 9 0.50−0.70, 10 0.11− 0.86, 16 and 0.20−0.66 6 at substrate temperatures of 300 9,10,16 and 350 °C6 on Si substrates 6,9,10,16 as well as on Pt films. 9 Unfortunately, the amorphous films possess markedly lower refractive index and permittivity values than the crystalline films with the same composition.…”
Section: Introductionmentioning
confidence: 99%
“…Another possible solution was to mix hafnium oxide with other dielectric materials with higher permittivity, such as titanium oxide (with k ~ 50–80). The high dielectric constant of the titanium oxide originates from the soft phonons of titanium, and an increase in the overall dielectric constant of gate oxides after mixing HfO 2 and TiO 2 was achieved [16,17]. Although the addition of TiO 2 improved the dielectric constant of an HfO 2 -based material, the small energy band gap of TiO 2 [18], which would result in a large leakage current, remained an issue to be considered [17].…”
Section: Introductionmentioning
confidence: 99%
“…The high dielectric constant of the titanium oxide originates from the soft phonons of titanium, and an increase in the overall dielectric constant of gate oxides after mixing HfO 2 and TiO 2 was achieved [ 16 , 17 ]. Although the addition of TiO 2 improved the dielectric constant of an HfO 2 -based material, the small energy band gap of TiO 2 [ 18 ], which would result in a large leakage current, remained an issue to be considered [ 17 ]. Thus, the influence of different amounts of titanium oxide on the properties of the HfO 2 -based material is of great interest.…”
Section: Introductionmentioning
confidence: 99%
“…Significant progress has been made on the screening and selection of high -k gate dielectrics, understanding their physical properties, and their integration into CMOS technology [13,14,15,16,17,18,19,20]. Now it is recognized that a large family of oxide-based materials emerges as candidates to replace SiO 2 gate dielectrics in advanced CMOS applications [21,22,23,24,25,26]. Among them are cerium oxide CeO 2 [27], cerium zirconate CeZrO 4 [28], gadolinium oxide Gd 2 O 3 [29], erbium oxide Er 2 O 3 [30], neodymium oxide Nd 2 O 3 [31], aluminum oxide Al 2 O 3 [32], lanthanum aluminum oxide LaAlO 3 [33], lanthanum oxide La 2 O 3 [34], yttrium oxide Y 2 O 3 [35], tantalum pentoxide Ta 2 O 5 [36], titanium dioxide TiO 2 [37], zirconium dioxide ZrO 2 [38], lanthanum doped zirconium oxide La x Zr 1 −x O 2−δ [39], hafnium oxide HfO 2 [40], HfO 2 -based oxides La 2 Hf 2 O 7 [41], Ce x Hf 1 −x O 2 [42], hafnium silicate HfSi x O y [43], and rare-earth scandates LaScO 3 [44], GdScO 3 [45], DyScO 3 [46], and SmScO 3 [47].…”
Section: Introductionmentioning
confidence: 99%