2013
DOI: 10.1016/j.tsf.2013.06.074
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Atomic layer deposition of TiO2 from TiCl4 and O3

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Cited by 67 publications
(47 citation statements)
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“…an increasing number of cycles, and thus film thickness, was associated with a slight increase in surface roughness. Similar results were obtained, the morphology of TiO 2 film deposited onto a Si substrate using the atomic layer deposition method was investigated, at similar parameters of the process [29]. They also observed that an increase in surface roughness was related to greater film thickness.…”
Section: Resultssupporting
confidence: 76%
“…an increasing number of cycles, and thus film thickness, was associated with a slight increase in surface roughness. Similar results were obtained, the morphology of TiO 2 film deposited onto a Si substrate using the atomic layer deposition method was investigated, at similar parameters of the process [29]. They also observed that an increase in surface roughness was related to greater film thickness.…”
Section: Resultssupporting
confidence: 76%
“…In the process of growth of metal oxides, in which H 2 O is used as an oxygen precursor, hydroxyl groups can be formed on the surface of substrate during the oxygen precursor pulse. Thus, the adsorbed metal precursor may react with surface hydroxyl groups and release some ligands in this reaction [14,15].…”
Section: Introductionmentioning
confidence: 99%
“…ZrO 2 films have been grown by several water-free ALD processes [21], such as in those based on (C 5 H 5 )Zr(N(CH 3 ) 2 ) 3 and oxygen plasma [7,22], Zr[N(CH 3 ) 2 ] 4 and O 3 [14], Zr[N(CH 3 )(C 2 H 5 )] 4 and O 3 [6,9,11,23], Cp 2 ZrCl 2 and O 3 [13,24], or Zr(NEtMe) 3 (guanNEtMe) and O 3 [25]. Regarding metal halide based and hydrogen-free ALD processes, depositions of Al 2 O 3 from AlCl 3 and O 3 [26], TiO 2 from TiCl 4 and O 3 [27], Ta 2 O 5 from TaCl 5 and O 3 [28], HfO 2 from HfCl 4 and O 3 [29], and HfO 2 from HfI 4 and O 2 [30] have been reported. There is also an implication about the possibility to atomic layer deposition of [29], although the details of the process have remained beyond the scope of that study.…”
Section: Introductionmentioning
confidence: 99%