Atomic Layer Deposition of Titanium Oxide on Self-Assembled-Monolayer-Coated Gold

Seo, Eun Kyoung; Lee, Jung W.; Sung-Suh, Hyung Mi; Sung, Myung Mo

doi:10.1021/cm035140x

Cited by 89 publications

(90 citation statements)

References 22 publications

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“…A large fraction of this work does not involve growth on the organic but instead the use of a SAM to block the growth of an inorganic thin film. 75 In a mixed layer of these same SAMs, it was found that the morphology of the subsequently deposited TiO 2 depended on the relative surface concentration of uOH versus uCH 3 terminations. Concerning growth on SAMs, the ALD of WC x N y , using B͑C 2 H 5 ͒ 3 , WF 6 , and NH 3 as the thin film precursors, has been examined on SAMs possessing uBr, uCH 3 , and uCN terminations.…”

Section: Introductionmentioning

confidence: 98%

Interfacial organic layers: Tailored surface chemistry for nucleation and growth

Hughes¹,

Engstrom²

2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Interactions between radical growth precursors on plasma-deposited silicon thin-film surfacesThe interfaces between inorganic and organic materials are important to a wide variety of technologies. A significant challenge concerns the formation of these interfaces when the inorganic layer must be grown on a pre-existing organic layer. In this review the authors focus on fundamental aspects of inorganic-organic interface formation using transition metal coordination complexes and atomic layer deposition. First, the authors discuss aspects of the synthesis and characterization of ultrathin interfacial organic layers, formed mostly on SiO 2 and possessing a variety of functional groups, including layers with a branched microstructure. The authors go on to discuss the reactions of transition metal coordination complexes with these layers. A number of factors control the uptake of the transition metal complex and the composition of the adsorbed species that are formed. These include the identity, density, and dimensionality or spatial distribution of the functional groups. At room temperature, adsorption on layers that lack functional groups results in the penetration of the organic layer by the transition metal complex and the reaction with residual uOH at the organic/SiO 2 interface. Adsorption on layers with a mostly two-dimensional arrangement of reactive functional groups results in the formation of molecular "bipods," where the surface bound functional groups react with the complex via two ligand exchange reactions. In contrast, for layers that possess a high density of functional groups arranged three dimensionally, the transition metal complex can be virtually stripped of its ligands. Atomic layer deposition on interfacial organic layers also depends strongly on the density and accessibility of reactive functional groups. On surfaces that possess a high density of functional groups, deployed two dimensionally, growth via atomic layer deposition is initially weakly attenuated, mostly uniform and smooth, and eventually evolves to growth characteristic of unmodified SiO 2 . Growth on layers that lack sufficient densities of functional groups is initially strongly attenuated, in contrast, and the resulting films are rough, severely islanded and three dimensional. As a consequence, there is a correlation between the strength of the initial attenuation in the rate of growth and the thin film morphology. Correlations between the initial uptake of the transition metal complex by the organic layer and the initial rate of thin film growth are less direct, however, as the composition and structure of the chemisorbed species must also be considered.

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Section: Introductionmentioning

confidence: 98%

Interfacial organic layers: Tailored surface chemistry for nucleation and growth

Hughes¹,

Engstrom²

2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…Titanium dioxide (TiO 2 ) has many useful electrical and optical properties, such as a high refractive index, high dielectrical permittivity, semiconductivity, excellent transmittance of visible light, and so forth, which make TiO 2 films useful in many fields, like microelectonics [2], optical cells [3], solar energy conversion [4], efficient catalyst [5]. Accordingly, fabrication of thin films and micropatterns of TiO 2 has been attempted by various methods in the past decades [6][7][8][9][10][11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

“…This feature has permitted the ability to pattern polymer thin films on the nanometer scale. (3) Microcontact printing (µCP) [11][12][13][14][15]. During this process, the PDMS stamp was used to transfer a kind of self-assembled monolayers (SAMs) patterns to the substrate, and then the patterned SAMs could be used as the templates for the deposition or etching materials.…”

Section: Introductionmentioning

confidence: 99%

Site selective micro-patterned rutile TiO2 film through a seed layer deposition

Shan

Miao

Xue

et al. 2007

Journal of Colloid and Interface Science

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“…For instance, a single surface can be modified to have regions of two or more different properties depending on the choice of SAM. Seo et al demonstrated a change of the properties of a Au surface by using two different SAMs, octadecanethiol (ODT) and mercaptoundecanol (MOU) [37]. These two SAM molecules have same thiol head group but different tail groups: CH 3 termination and OH termination for ODTand MOU, respectively.…”

mentioning

confidence: 99%

Nanopatterning by Area‐Selective Atomic Layer Deposition

Lee

Bent

2011

Atomic Layer Deposition of Nanostructured Materials

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In conventional device fabrication, patterning is a top-down process based largely on photolithography and etching and is a main bottleneck for device downscaling. Atomic layer deposition (ALD) can provide an alternative bottom-up method for patterning when used in conjunction with self-assembled materials and selective chemistries. As presented in previous chapters, ALD is a powerful technique for depositing thin films for nanoscale device fabrication thanks to its excellent conformality, atomic scale thickness controllability, and large-area uniformity. Film growth controlled by surface reactions is one of the inherent properties of ALD. Because in an ideal ALD process, all of the precursors used for ALD react with each other only at the surface, highly conformal films can be deposited even inside complex 3D structures. By taking advantage of this inherent surface reaction property, ALD can be utilized for patterning based on a bottom-up process. In the following chapter, selective deposition methods will be presented. The contents include the surface modification techniques that are employed to exploit the surface reaction properties of ALD and related patterning processes with reported results. Concept of Area-Selective Atomic Layer DepositionFilm growth by ALD begins with formation of nuclei through a reaction of precursor molecules and surface species. Once nuclei are formed on a surface, the growth of the film may proceed by growth and coalescence of the nuclei, whereas if no nucleation occurs no film will be deposited. Therefore, the deposition characteristics of ALD strongly depend on the surface properties of the substrate. For example, in many cases, the nucleation of ALD is easy on hydrophilic OH-terminated substrates (e.g., SiO 2 ), while it is difficult on hydrophobic H-terminated surfaces (e.g., Si) [1][2][3][4]. Similarly, a nucleation delay in ALD, typically called the incubation time, is due to difficulty of nucleation at the surface. The nucleation delay and the variability of the growth characteristics depending on the surface can be problematic in typical thin

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Atomic Layer Deposition of Titanium Oxide on Self-Assembled-Monolayer-Coated Gold

Cited by 89 publications

References 22 publications

Interfacial organic layers: Tailored surface chemistry for nucleation and growth

Interfacial organic layers: Tailored surface chemistry for nucleation and growth

Site selective micro-patterned rutile TiO2 film through a seed layer deposition

Nanopatterning by Area‐Selective Atomic Layer Deposition

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