Atomic layer deposition of WxN/TiN and WNxCy/TiN nanolaminates

Elers, Kai‐Erik; Saanila, Ville; Li, W.-M.; Soininen, P.; Kostamo, Juhana; Haukka, Suvi; Juhanoja, Jyrki; Besling, W.

doi:10.1016/s0040-6090(03)00501-7

Cited by 44 publications

(37 citation statements)

References 8 publications

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“…10). 70, 71 One of the advantages of nano‐laminate‐structured metals is that they provide controllability of material properties, such as resistivity and the work function.…”

Section: Thermal Ald Metallization Processes With An Ab Sequencementioning

confidence: 99%

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Recent Developments of Atomic Layer Deposition Processes for Metallization

Liu¹

2013

Chemical Vapor Deposition

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Atomic layer deposition (ALD) has become an enabling technology for a wide range of applications where depositions of high quality, conformal thin films are desired. The needs of conducting materials with tailored properties call for ALD metallization processes that can meet diverse requirements in various applications. Recent developments of ALD processes for conducting materials have led to some novel ALD chemistries. Most of the ALD binary materials are formed in a typical AB sequence from two reactants. More complex ternary and doped materials can be achieved according to the same AB sequence principle through nano‐lamination of two binary materials using three or more reactants. It is demonstrated that ternary and elemental materials can be deposited using two reactants with a basic ALD AB sequence. Furthermore, an ALD process is not limited to an AB sequence, an ABC sequence with a surface‐controlled ALD reaction is also possible. A double replacement reaction mechanism is proposed with examples of novel processes such as TaCxNy, WCx, and WNxCy. Recent developments of ALD metallization processes have opened up more opportunities of producing novel ALD materials for industrial applications.

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“…10). 70, 71 One of the advantages of nano‐laminate‐structured metals is that they provide controllability of material properties, such as resistivity and the work function.…”

Section: Thermal Ald Metallization Processes With An Ab Sequencementioning

confidence: 99%

“… Comparison of TiN with nano‐laminate metal nitrides. a) TiN,71 b) TiN/WN x nano‐laminates,71 c) TiN/TaC x N y /TiN70 stacked layers. All material maintains the columnar crystalline features of TiN film (Reproduced with permission from refs.…”

Section: Thermal Ald Metallization Processes With An Ab Sequencementioning

confidence: 99%

Recent Developments of Atomic Layer Deposition Processes for Metallization

Liu¹

2013

Chemical Vapor Deposition

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“…The non-uniformity, as high as ∼ 10 % on a 200 mm wafer, [22][23][24] and ∼ 10-13 % on a 300 mm wafer, is proposed to result from the reactivity of the HCl by-products with the TiN film surface. HCl gas has been found to form during both precursor pulses, so that more HCl is released during the TiCl 4 pulse than during the NH 3 pulse when the deposition temperature is below 300°C.…”

Section: Ticl 4 /Nh 3 Processmentioning

confidence: 99%

Film Uniformity in Atomic Layer Deposition

Elers

Blomberg

Peussa

et al. 2006

Chemical Vapor Deposition

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113

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The sources of non-uniformity in thin films produced using atomic layer deposition (ALD) have been investigated by reviewing the mechanical hardware of ALD reactors, precursors, and the by-products of surface reactions. The most common causes of non-uniformity are overlapping pulses, thermal self-decomposition of precursors, and non-uniform gas distribution. Less studied, however, are the consequences of downstream surface reactions of gaseous by-products. In particular, titanium nitride films have been found to be significantly less uniform than those of transition metal oxides deposited from metal halides. The influence of reaction by-products on the TiN film growth has been studied by comparing the deposition in the cross-flow and showerhead style reactors. Finally, the sources of non-uniformity in plasma enhanced (PE) ALD are illustrated by studying the TiN deposition process.

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“…6 Copper diffusion barrier films are in contact with several materials in an integration scheme; copper and silicon ͑for the interconnects͒, SiO 2 or low-k dielectrics ͑as dielectrics͒, SiC and Si 3 N 4 ͑as etch stoppers͒, etc. Tungsten nitride carbide ͑WN x C y ͒ deposition of thick films ͑ϳ5-33 nm͒ has been reported on Cu, [7][8][9] Si, 9 SiO 2 , 7-10 and on polymer surfaces. 11 The existing stages of WN x C y growth behavior depend on substrate reactive site type and density.…”

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confidence: 99%