Atomic Layer Deposition of Y[sub 2]O[sub 3] Films on Silicon Using Tris(ethylcyclopentadienyl) Yttrium Precursor and Water Vapor

Majumder, Prodyut; Jursich, Gregory; Kueltzo, Adam; Takoudis, Christos G.

doi:10.1149/1.2929825

Cited by 43 publications

(38 citation statements)

References 25 publications

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“…13(a)). The k r values were comparable to the square of Y 2 O 3 refractive index (n = 1.8-2.0) [18,39,48]. Besides, ˚B values determined for the samples were shown in Fig.…”

Section: Temperature Independence Current-conduction Mechanismssupporting

confidence: 67%

“…Deposition of Y 2 O 3 films has been done by e-beam evaporation [16,[19][20][21][22][23][24][25][26][27][28], molecular beam epitaxy [29,30], RF magnetron sputtering [31][32][33][34][35], laser ablation [36], RF sputtering [37], reactive RF sputtering [15,38], ion beam sputtering [17,36,[39][40][41], plasma-assisted chemical vapor deposition (CVD) [42,43], pulsed liquid-injection plasma-enhanced metallorganic CVD [4,44], low pressure CVD [45], atomic layer deposition [18,[46][47][48], and ionized cluster beam deposition [49,50] techniques. The quality of deposited Y 2 O 3 film may be attributed to two factors, namely crystallinity of the structure and stoichiometry of the chemical composition.…”

Section: Introductionmentioning

confidence: 99%

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Effects of post-deposition annealing ambient on Y2O3 gate deposited on silicon by RF magnetron sputtering

Quah

Cheong

2012

Journal of Alloys and Compounds

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“…13(a)). The k r values were comparable to the square of Y 2 O 3 refractive index (n = 1.8-2.0) [18,39,48]. Besides, ˚B values determined for the samples were shown in Fig.…”

Section: Temperature Independence Current-conduction Mechanismssupporting

confidence: 67%

Section: Introductionmentioning

confidence: 99%

Effects of post-deposition annealing ambient on Y2O3 gate deposited on silicon by RF magnetron sputtering

Quah

Cheong

2012

Journal of Alloys and Compounds

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“…Further description of the ALD reactor along with the other process parameters was reported elsewhere. 24 In the case of Hf x Ti 1−x O 2 deposition, the TDEAH/H 2 O and TDEAT/H 2 O ALD cycles were used in the ratios of 1:5, 1:3, 1:1, 3:1, and 5:1 in order to vary the composition of the film over a wide range; these cycle ratios were repeated until a desired film thickness was obtained.…”

Section: Methodsmentioning

confidence: 99%

Atomic Layer Deposition of HfO[sub 2], TiO[sub 2], and Hf[sub x]Ti[sub 1−x]O[sub 2] Using Metal (Diethylamino) Precursors and H[sub 2]O

Tao¹,

Kueltzo²,

Singh³

et al. 2011

J. Electrochem. Soc.

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Tetrakis ͑diethylamino͒ hafnium ͑TDEAH͒, tetrakis ͑diethylamino͒ titanium ͑TDEAT͒, and H 2 O were used for the atomic layer deposition ͑ALD͒ of HfO 2 , TiO 2 , and Hf x Ti 1−x O 2 films on silicon substrates. The ALD temperature windows were found to be 175-250°C for HfO 2 ͑0.12 nm/cycle͒ and 150-250°C for TiO 2 ͑ ϳ0.06 nm/cycle͒. The 175-250°C overlap region is ideal for the ALD of the Hf x Ti 1−x O 2 films. Different compositions of Hf x Ti 1−x O 2 were obtained by varying the ͓TDEAH/H 2 O͔/͓TDEAT/H 2 O͔ cycle ratios, and excellent tunability of film composition was found using X-ray photoelectron spectroscopy ͑XPS͒. The Hf x Ti 1−x O 2 deposition rate was found to be the superposition of the two individual growth rates. Both as-deposited and postdeposition annealed films were studied with XPS, phase shift interferometry, and grazing incidence X-ray diffraction. As-deposited HfO 2 and TiO 2 films were found to be amorphous, and they began to crystallize after annealing at 600°C in the monoclinic phase ͑HfO 2 ͒ and in weak anatase phase ͑TiO 2 ͒. The Hf x Ti 1−x O 2 films remained amorphous after annealing up to about 1000°C in N 2 for 5 min.Structural and interfacial studies of ultrathin, high dielectric constant ͑͒ films during high temperature fabrication processes are critical to the continuous scaling of microelectronic devices. In particular, these materials are of great importance for the gate insulator of metal oxide semiconductor field effect transistors and the capacitor dielectric of dynamic random access memories. 1,2 So far, many candidate materials such as have been studied for the replacement of SiO 2 . 3 From all these materials, HfO 2 and TiO 2 seem to be promising candidates due to their favorable properties. HfO 2 is known to have relatively good thermal stability and compatibility with the Si substrate, and it has a dielectric constant of 15-30 with a large bandgap ͑5.7 eV͒. 4-6 TiO 2 is even more favorable in terms of its dielectric constant which is 80 or higher; 7 however, it has a rather small bandgap ͑3.1 eV͒, 8 which could result in more leakage current than that of HfO 2 . The reported crystallization temperature of each of these two materials has been reported to be as low as ϳ550°C. 9,10The earliest atomic layer deposition ͑ALD͒ of HfO 2 from tetrakis ͑diethylamino͒ hafnium ͑TDEAH͒ and H 2 O was published by Deshpande et al. with a growth rate of ϳ0.13 nm/cycle at 300°C. 11 Titanium tetrachloride ͑TiCl 4 ͒ and titanium isopropoxide ͑TTIP͒ have typically been used as metal precursors in the ALD of TiO 2 films, with water being the oxidant. 12-16 Growth rates of 0.03 nm/cycle or lower in these systems were reported. Our earlier ALD studies with other homoleptic metal precursors having the diethylamino ligand, such as TDEAH and tris ͑diethylamino͒ aluminum, have resulted in broad ALD temperature windows and rather high growth rates. 9,11,17,18 Such results have prompted interest in examining the suitability of tetrakis ͑diethylamino͒ titanium ͑TDEAT͒ as a precursor for the ALD of TiO 2 ...

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“…This value is line with the data reported by other groups on atomic-layer deposited Y 2 O 3 . 15,16,18 The C-V characteristics (Fig. 5) show anticlockwise hysteresis of about 1 V, which can be explained by the presence of trap states, e.g.…”

Section: Functional Propertiesmentioning

confidence: 99%

Water assisted atomic layer deposition of yttrium oxide using tris(N,N′-diisopropyl-2-dimethylamido-guanidinato) yttrium(iii): process development, film characterization and functional properties

et al. 2018

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Atomic Layer Deposition of Y[sub 2]O[sub 3] Films on Silicon Using Tris(ethylcyclopentadienyl) Yttrium Precursor and Water Vapor

Cited by 43 publications

References 25 publications

Effects of post-deposition annealing ambient on Y2O3 gate deposited on silicon by RF magnetron sputtering

Effects of post-deposition annealing ambient on Y2O3 gate deposited on silicon by RF magnetron sputtering

Atomic Layer Deposition of HfO[sub 2], TiO[sub 2], and Hf[sub x]Ti[sub 1−x]O[sub 2] Using Metal (Diethylamino) Precursors and H[sub 2]O

Water assisted atomic layer deposition of yttrium oxide using tris(N,N′-diisopropyl-2-dimethylamido-guanidinato) yttrium(iii): process development, film characterization and functional properties

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