Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

Ye, G.; Wang, H.; Arulkumaran, S.; Ng, Geok Ing; Hofstetter, R.; Li, Y.; Anand, Manish; Ang, Kian Siong; Maung, Y. K. T.; Foo, S. C.

doi:10.1063/1.4824445

Cited by 71 publications

(29 citation statements)

References 13 publications

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“…This effect is also described as dynamic behavior degradation, gate lag, drain lag, etc., which is caused by the charge trapping effect on the AlGaN surface especially in the access region between gate and drain [4-6]. In order to solve these two issues, the deposition of oxide-based dielectric such as SiO 2 [7], Al 2 O 3 [8], LaLuO 3 [9], and SrO 2 [10,11] and dielectric stack such as SiN/Al 2 O 3 [12] as gate dielectric layer and passivation layer in the access region simultaneously is widely adopted. But it has been revealed that the introduction of oxide-based dielectric is likely to form Ga-O bond which is thought as one of interface sources leading to current collapse [13].…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique

et al. 2015

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Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is presented. This technique features the AlN thin film grown by thermal ALD at 400°C without plasma enhancement. A 10.6-nm AlN thin film was grown upon the surface of the HEMT serving as the gate dielectric under the gate electrode and as the passivation layer in the access region at the same time. The MISHEMTs with thermal ALD AlN exhibit enhanced on/off ratio, reduced channel sheet resistance, reduction of gate leakage by three orders of magnitude at a bias of 4 V, reduced threshold voltage hysteresis of 60 mV, and suppressed current collapse degradation.

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Section: Introductionmentioning

confidence: 99%

AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique

et al. 2015

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“…The amorphous state of ZrO 2 ( a ‐ZrO 2 ) has various important technological applications as well . The theoretical investigations based on first‐principles molecular dynamics (MD) simulations have revealed that it has a local structure analogous to that of the baddeleyite phase.…”

Section: Introductionmentioning

confidence: 99%

“…The amorphous state of ZrO 2 (a-ZrO 2 ) has various important technological applications as well. 5,[28][29][30] The theoretical investigations based on first-principles molecular dynamics (MD) simulations [31][32][33][34] have revealed that it has a local structure analogous to that of the baddeleyite phase. The crystallization behavior of a-ZrO 2 at high temperatures has been also experimentally explored.…”

Section: Introductionmentioning

confidence: 99%

Amorphous zirconia at high pressure

Durandurdu

2018

J Am Ceram Soc

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We show, by means of ab initio calculations, that amorphous zirconia progressively transforms to a high‐density amorphous phase with the application of pressure. The average coordination number of Zr and O atoms under pressure rises gradually to 8 and 4, respectively. The main building unit of the dense noncrystalline state is the eightfold‐coordinated Zr atoms (62.5%). When the coordinated modification of Zr atoms in the zirconia crystal at high pressure and temperature conditions is considered, it can be perceived that amorphous zirconia follows a transformation mechanism similar to the one observed at high temperature but different than the one detected at high pressure. The dense disordered phase is indeed found to be locally comparable with the high‐temperature tetragonal crystal. Upon decompression, some high‐pressure arrangements are persevered in the model and a transformation into another amorphous state whose structure is intermediate between uncompressed and dense amorphous phases is observed in the simulations. The high‐pressure amorphous structures are found to be semiconductors with a band gap smaller than that of the original model.

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“…Excellent electrical characteristics of GaN-based MISHEMTs utilizing ZrO 2 as gate dielectrics are reported recently. [9][10][11][12][13][14] In addition, from device fabrication point of view, post-deposition annealing (PDA) could serve as an effective way to improve the interfacial properties between high-k dielectric layer and GaN-based substrates. However, even though AlGaN has been extensively utilized in GaN HEMTs, few studies have been carried out on the interfacial structure and chemical bonding states at the interface between ZrO 2 and AlGaN subjected to post-deposition annealing.…”

mentioning

confidence: 99%

Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition

Hong

et al. 2015

Applied Physics Letters

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The effect of post-deposition annealing on chemical bonding states at interface between Al 0.5 Ga 0.5 N and ZrO 2 grown by atomic layer deposition (ALD) is studied by angle-resolved x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that both of Al-O/Al 2p and Ga-O/Ga 3d area ratio decrease at annealing temperatures lower than 500 C, which could be attributed to "clean up" effect of ALD-ZrO 2 on AlGaN. Compared to Ga spectra, a much larger decrease in Al-O/Al 2p ratio at a smaller take-off angle h is observed, which indicates higher effectiveness of the passivation of Al-O bond than Ga-O bond through "clean up" effect near the interface. However, degradation of ZrO 2 /AlGaN interface quality due to re-oxidation at higher annealing temperature (>500 C) is also found. The XPS spectra clearly reveal that Al atoms at ZrO 2 /AlGaN interface are easier to get oxidized as compared with Ga atoms. V C 2015 AIP Publishing LLC. [http://dx.

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Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

Abstract: Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon. Applied physics letters, 103(14), 142109-.

Cited by 71 publications

References 13 publications

AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique

AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique

Amorphous zirconia at high pressure

Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition

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