2021
DOI: 10.1021/acsami.1c12933
|View full text |Cite
|
Sign up to set email alerts
|

Atomic Layer Deposition on Polymer Thin Films: On the Role of Precursor Infiltration and Reactivity

Abstract: Inorganic barriers grown by atomic layer deposition (ALD) can overcome the stability issues originating from the permeation of foreign species (water and oxygen) into polymer thin films. Alternatively, infiltration of ALD species into the bulk of the polymer can be used to modify its characteristic properties. In this study, the feasibility of growing an inorganic barrier with ALD on polystyrene, poly(methyl methacrylate), and poly(ethylene terephthalate glycol) thin films is evaluated. The nucleation and grow… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

3
36
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
6
2

Relationship

0
8

Authors

Journals

citations
Cited by 36 publications
(39 citation statements)
references
References 58 publications
3
36
0
Order By: Relevance
“…12 Furthermore, in a recent study it was found that VPI is also contributing to ALD processes when polymeric substrates are used. 13 The VPI mechanism consists of three steps: dissolution of the precursor in the polymer, diffusion of the precursor and by-products through the polymer structure and entrapment of the precursor by reaction with the polymer chains. 11 Thus, from a precursor point of view, apart from the typical ALD criteria volatility, thermal stability and reactivity, [14][15][16] especially shape, size and polarity of the molecule play a major role for dissolution and diffusion processes and can be tuned for the desired hybrid properties.…”
Section: Introductionmentioning
confidence: 99%
“…12 Furthermore, in a recent study it was found that VPI is also contributing to ALD processes when polymeric substrates are used. 13 The VPI mechanism consists of three steps: dissolution of the precursor in the polymer, diffusion of the precursor and by-products through the polymer structure and entrapment of the precursor by reaction with the polymer chains. 11 Thus, from a precursor point of view, apart from the typical ALD criteria volatility, thermal stability and reactivity, [14][15][16] especially shape, size and polarity of the molecule play a major role for dissolution and diffusion processes and can be tuned for the desired hybrid properties.…”
Section: Introductionmentioning
confidence: 99%
“…ALD allows the preparation of thin films with a sub-nanometer thickness control, high uniformity and excellent conformality even on high aspect ratios substrates, a unique capability, as discussed in the first section of this chapter [3,[53][54][55][56][57][58]. As ALD allows the conformal coating of complex substrates with nanolayers made of an expanding [51,52]), permitting the tuning of the matrix.…”
Section: Ald For Conventional Additive Manufacturing: Recent Work Inv...mentioning
confidence: 99%
“…As shown by numerous studies, the risk of reaction between the polymer and the precursors increases with temperature and long exposures times. In addition, the presence of functional groups in the polymer chains also increases the potential infiltration of the ALD precursors [51,52,59,[64][65][66][67][68]. Thus, even if most of the ALD processes are compatible with the coating of 3D printed objects, these considerations must be taken into account and the processes have to be tuned accordingly to coat certain 3D printed materials.…”
Section: Illustration Of the Combination Of 3d Printing And Atomic La...mentioning
confidence: 99%
See 1 more Smart Citation
“…Atomic layer deposition (ALD) on polymers − initiated a three-dimensional (3D) growth process of inorganic materials into polymeric films known as sequential infiltration synthesis (SIS) or vapor phase infiltration (VPI). − Several studies have been published to investigate the fundamental physical chemistry of the SIS/VPI process. − The understanding of the basic mechanisms governing the process allowed expanding the list of materials that can be grown using this technique. In particular, the growth of several oxides, like Al 2 O 3 , TiO 2 , ZnO, − WO x , VO x , In 2 O 3 , , Ga 2 O 3 , and SnO 2 , has been already reported in the literature for different applications, such as high-resolution hard masks, − nanoparticle coatings and decoration, ,, superhydrophobic coatings, optical materials and antireflection coatings, , enhancer of the contrast and scattering of nanostructures, ,, 3D superlattices, oil sorbents, UV and thermal protection, tuning of mechanical propertries, sensing applications, membranes, − elastic energy-storage structures, electrical devices, ,,, and resistive switching devices .…”
Section: Introductionmentioning
confidence: 99%