Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure

Abstract

Abstract:Metal chalcogenides based on the C-M-M-C (C = chalcogen, M = metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown that specular, large area films of γ-InSe and Sb 2 Se 3 can be grown via atomic layer deposition (ALD) at relatively low temperatures. Optical (absorption, Raman), crystalline (X-ray diffraction), and composition (XPS) properties of these films have been measured and compared to those reported for exfoliated films and have been found to be similar. Heterostructures composed of a layer of γ-InSe (intrinsically n-type) followed by a layer of Sb 2 Se 3 (intrinsically p-type) that display diode characteristics were also grown.

Sb2Se3(100) : A strongly anisotropic surface

“…Also, in this case, the spin-orbit splitting and area ratio (Table I) are in good agreement with theoretical values [24]. The Sb and Se peak positions agree with BE values expected for Sb 2 Se 3 [14,34] and the ratio between Se 3d and Sb 3d total peak areas, divided by the respective cross sections and analyzer transmission function, matches the stoichiometric value of 1.5 (see Table I). All these results indicate a successful cleavage in UHV and a high quality and phase purity of our Sb 2 Se 3 single crystals.…”

Vapor transport deposition of Sb2Se3 thin films for photodetector application

“…In the Sb 3d spectrum, the peaks at 528.5 eV and 538.5 eV can be ascribed to Sb-Se bond, while the peaks at 530.5 eV and 539.5 eV should be ascribed to the Sb-O bond. [20][21][22][23] In the Se 3d spectrum, the peaks at 53.5 eV and 54.5 eV can be ascribed to Se 2À , while the peak at 55.8 eV should be ascribed to the elemental Se. [20][21][22][23] Therefore, the prepared Sb 2 Se 3 film also contains some Sb 2 O 3 and elemental Se components, which may result from the slight oxidation of Sb at the surface of crystallites.…”

Atomic Layer Deposition of Two-Dimensional Layered Materials: Processes, Growth Mechanisms, and Characteristics

“…Thus, two-half ALD reactions were suggested (Equations 9A and 9B): InSe is a group IIIA monochalcogenide and consists of Se-In-In-Se layers stacked together by weak van der Waals forces. 137 Among several InSe polytypes, the hexagonal (b-InSe) and rhombohedric (g-InSe) phases possess 2D layered structures but show distinct atomic coordination. 138 The b phase comprises eight atoms extended over two layers, while the g phase has a rhombohedric unit cell containing only one complex layer of four atoms.…”