Atomic layer growth of SiO2 on Si(100) using SiCl4 and H2O in a binary reaction sequence

Sneh, Ofer; Wise, Michael L.; Ott, Andrew W.; Okada, L.A.; George, Steven M.

doi:10.1016/0039-6028(95)00471-8

Cited by 143 publications

(161 citation statements)

References 71 publications

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“…Earlier studies of SiO 2 ALD at higher temperatures of 600 -680 K were consistent with the first mechanism where SiCl 4 reacts with one hydroxyl group [5]. Different mechanisms may be expected for catalyzed SiO 2 ALD at low temperatures and uncatalyzed SiO 2 ALD at much higher temperatures.…”

Section: Sio 2 Ald Film Growthmentioning

confidence: 66%

“…4 was 30 ng cm À 2 per cycle or 1.35 Å per cycle assuming a SiO 2 density of 2.2 g cm À 3 [5,6]. This maximum SiO 2 growth rate is obtained with !…”

Section: Sio 2 Ald Film Growthmentioning

confidence: 99%

“…During the catalyzed SiCl 4 reaction, pyridine forms hydrogen bonds with the SiOH* species and makes the oxygen a stronger nucleophile [7,8]. For the (B) reaction, H 2 O reacts with the SiCl* surface species to deposit OH* species on the surface [5,6]. Pyridine is also believed to hydrogen bond with H 2 O and make the oxygen a stronger nucleophile during the catalyzed H 2 O reaction with the SiCl* species [7,8].…”

Section: Introductionmentioning

confidence: 95%

“…For the (A) reaction during SiO 2 ALD, the surface is covered by hydroxyl (SiOH*) groups and SiCl 4 reacts with these SiOH* species to deposit SiCl* species on the surface [5,6]. During the catalyzed SiCl 4 reaction, pyridine forms hydrogen bonds with the SiOH* species and makes the oxygen a stronger nucleophile [7,8].…”

Section: Introductionmentioning

confidence: 99%

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SiO2 film growth at low temperatures by catalyzed atomic layer deposition in a viscous flow reactor

George

2005

Thin Solid Films

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Section: Sio 2 Ald Film Growthmentioning

confidence: 66%

“…4 was 30 ng cm À 2 per cycle or 1.35 Å per cycle assuming a SiO 2 density of 2.2 g cm À 3 [5,6]. This maximum SiO 2 growth rate is obtained with !…”

Section: Sio 2 Ald Film Growthmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

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SiO2 film growth at low temperatures by catalyzed atomic layer deposition in a viscous flow reactor

George

2005

Thin Solid Films

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“…In addition, the decomposition of the Fe(CO) 5 the shape of the Si peak and the appearance of a small peak at 63 eV. Sneh et al reported AES spectra during SiO 2 growth on Si(100), which showed the 63 eV peak of stoichiometric SiO 2 and the O (KLL) feature at 509 eV [27]. The appearance of the 63 eV peak after oxidation of the Fe/SiC surface indicates that some of the surface Si was oxidized.…”

Section: Fe/sic and O/fe/sic Surfacesmentioning

confidence: 95%

Activation of SiC Surfaces for Vapor Phase Lubrication by Chemical Vapor Deposition of Fe

2005

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Vapor phase lubrication (VPL) has been proposed as a method for lubrication of high temperature engines. During VPL, lubricants such as tricresylphosphate (TCP), (CH 3 -C 6 H 4 O) 3 P=O, are delivered through the vapor phase to high temperature engine parts and react on their surfaces to deposit a thin, solid, lubricating film. Although ceramics such as SiC are desirable materials for high temperature applications, their surfaces are unreactive for the decomposition of TCP and thus not amenable to VPL. As a means of activating the SiC surface for TCP decomposition we have used chemical vapor deposition of Fe from Fe(CO) 5 . Modification of the SiC surface with adsorbed Fe accelerates subsequent decomposition of TCP and deposition of P and C onto the surface. In the temperature range 500-800 K, m-TCP decomposes more readily on Fe-coated SiC surfaces than on SiC surfaces. The C and P deposition rates depend on the thickness of the Fe film and are further enhanced by oxidation of the Fe. This work provides a proof-of-concept demonstration of the feasibility of using VPL for ceramics.

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Co-deposition of Silica, Alumina, and Aluminosilicates from Mixtures of CH3SiCl3, AlCl3, CO2, and H2. Thermodynamic Analysis and Experimental Kinetics Investigation

Nitodas

Sotirchos

1999

Chem. Vap. Deposition

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The co-deposition of silica, alumina, and aluminosilicates from mixtures of methyltrichlorosilane, aluminum trichloride, carbon dioxide, and hydrogen was investigated in this study. In order to elucidate some aspects of the co-deposition process, the deposition of pure silica and pure alumina from mixtures of methyltrichlorosilane and aluminum trichloride, respectively, with CO 2 and H 2 was also investigated. Kinetic data were obtained by carrying out CVD experiments on SiC substrates in a hot-wall reactor of tubular geometry, which permitted continuous monitoring of the deposition rate through the use of a microbalance. Reaction rate data are presented for temperatures between 1073 and 1373 K (800±1100 C) at 13.3 kPa (100 torr) pressure for various feed compositions and various positions along the axis of the deposition reactor. Thermodynamic equilibrium computations were performed on the Al/Si/Cl/C/O/H, Al/Cl/C/O/H, and Si/Cl/C/O/H systems at the conditions used in the deposition experiments. The experimental observations are discussed in the context of the results of the equilibrium analysis and of past studies. Among the most interesting findings of this study is that the presence of AlCl 3 has a catalytic effect on the incorporation of silica in the deposit, leading to co-deposition rates that are a factor of 2±3 higher than the deposition rates that are obtained when only one of the two chlorides (CH 3 SiCl 3 or AlCl 3 ) is present in the feed.

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Atomic layer growth of SiO2 on Si(100) using SiCl4 and H2O in a binary reaction sequence

Cited by 143 publications

References 71 publications

SiO2 film growth at low temperatures by catalyzed atomic layer deposition in a viscous flow reactor

SiO2 film growth at low temperatures by catalyzed atomic layer deposition in a viscous flow reactor

Activation of SiC Surfaces for Vapor Phase Lubrication by Chemical Vapor Deposition of Fe

Co-deposition of Silica, Alumina, and Aluminosilicates from Mixtures of CH3SiCl3, AlCl3, CO2, and H2. Thermodynamic Analysis and Experimental Kinetics Investigation

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