Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

Kano, Emi; Kataoka, Keita; Uzuhashi, Jun; Chokawa, Kenta; Sakurai, Hideki; Uedono, Akira; Narita, Tadashi; Sierakowski, Kacper; Boćkowski, Michał; Otsuki, Ritsuo; Kobayashi, Koki; Itoh, Yuta; Nagao, Masahiro; Ohkubo, T.; Hono, K.; Suda, Jun; Kachi, Tetsu; Ikarashi, Nobuyuki

doi:10.1063/5.0097866

Cited by 13 publications

(11 citation statements)

References 66 publications

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“…The present work showed that the vacancy-type defects introduced by ion implantation exist even after UHPA at 1480°C, and they are expected to play a critical role in the formation of secondary defects and their atomic configuration. 20,33 Thus, knowledge on defect reactions revealed by the combination of characterization techniques used in the present work will shed light on finding appropriate annealing parameters for the fabrication of p-type GaN by Mg-implantation.…”

Section: Resultsmentioning

confidence: 95%

Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

Uedono

Sakurai²,

Uzuhashi³

et al. 2023

Gallium Nitride Materials and Devices XVIII

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Behaviors of vacancy-type defects in ion-implanted GaN were studied by means of positron annihilation. Si or Mg ions were implanted into GaN to obtain 300-nm-deep box profiles of the impurities. The ion-implanted samples were annealed up to 1480°C under a N 2 pressure of 1 GPa (ultra-high-pressure annealing: UHPA). For as-implanted GaN, the major defect species was identified as Ga-vacancy-type defects such as a divacancy (V Ga V N ). After annealing above 1000°C, vacancy clusters, such as (V Ga V N ) 3 , were introduced, and they were found to be remained even after 1480°C annealing. For Mg-implanted GaN with [Mg]=10 18 cm 3 , no large change in the depth distribution of Mg was observed before and after annealing at 1400°C. For the sample with [Mg]=10 19 cm 3 , however, Mg diffused into the bulk, which was attributed to the over-doping of Mg and their vacancy-assisted diffusion. The Mg diffusion was suppressed by sequential N-implantation, which was attributed to the reaction between Mg and vacancies under a N-rich condition. Interactions between vacancies, Mg, and H during UHPA were also discussed.

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Section: Resultsmentioning

confidence: 95%

Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

Uedono

Sakurai²,

Uzuhashi³

et al. 2023

Gallium Nitride Materials and Devices XVIII

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“…Figure n shows such an IDB, where the 1 4 or 3 4 <0001> translation results from a mirror plane inserted along the hexagonal (0001) basal plane. Heavily Mg-doped , or Mg ion-implanted , GaN have been shown to form this defect type due to Mg incorporation at an apex, eventually developing into a translated inverted pyramid. The dotlike defect described by Iwata et al in Mg ion-implanted GaN, which has a similar 1 4 <0001> translation, may also take the form of this defect.…”

Section: Atomic Structure Of Defectsmentioning

confidence: 99%

Atomic-Scale Characterization of Extended Defects in Wurtzite GaN Heterostructures

Chung

Zhang

Syaranamual

et al. 2023

ACS Appl. Nano Mater.

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We present an overview of the atomic structure of extended defects in wurtzite III-nitrides, focusing on GaN heterostructures applicable to light-emitting optoelectronic devices (LEDs and lasers) and radio frequency (RF) power electronics. We provide experimental routines to visualize and recognize these defects with aberration-corrected scanning transmission electron microscopy (STEM). Line, planar, and volume defects are imaged, with examples taken from InGaN multi quantum well heterostructures, epitaxially grown on Si. We demonstrate how the different line and planar defects can be identified by visualizing either the extra or sheared planes that are characteristic to each defect or by differentiating their unique atomic column projections through depth-sectioning. Volume defects in the form of locally phase-separated InN and metallic indium precipitates were also identified via spatially resolved electron energy-loss spectroscopy. The classification of defects established in this work and the methods to visualize them will be a reference to researchers in this field and will provide a foundation for the targeted engineering of future III-nitrides.

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“…This is considered to be due to the partial extension of dislocations in the loop. [55] Figure 12a shows the distribution of Mg atoms in the sample with sequential N-implantation. The Mg clusters indicated by letters (b, c, d, and e) appeared as planar shapes along with the c-plane.…”

Section: Impact Of N-implantation On Mg Activation and Secondary Defe...mentioning

confidence: 99%

Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

Uedono

Sakurai

Uzuhashi

et al. 2022

Physica Status Solidi (b)

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Herein, the annealing behaviors of defects in ion‐implanted GaN are studied by positron annihilation, cathodoluminescence, scanning transmission electron microscopy, and atom probe tomography. Si or Mg ions are implanted into GaN to obtain 300 nm deep box profiles of the impurities. The samples are annealed up to 1480 °C under a N2 pressure of 1 GPa. For as‐implanted GaN, the major defect species is identified as Ga‐vacancy‐type defects. After annealing above 1000 °C, vacancy clusters are introduced, and they remain even after 1480 °C annealing. For Mg‐implanted GaN with the Mg concentration ([Mg]) ≤ 1018 cm−3, no large change in the depth distribution of Mg is observed before and after annealing at 1400 °C. For the sample with [Mg] = 1019 cm−3, however, Mg diffuses into the bulk, which is attributed to the over‐doping of Mg and their vacancy‐assisted diffusion. The Mg diffusion is suppressed, and the donor–acceptor pair emission is enhanced by sequential N‐implantation, which is attributed to the reaction between Mg and vacancies under a N‐rich condition. For the samples annealed at 1480 °C, an accumulation of Mg around dislocation loops and Mg clustering are enhanced by the N‐implantation

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Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

Cited by 13 publications

References 66 publications

Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

Atomic-Scale Characterization of Extended Defects in Wurtzite GaN Heterostructures

Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

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