2013
DOI: 10.1021/nl401473j
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Atomic-Scale Mapping of Thermoelectric Power on Graphene: Role of Defects and Boundaries

Abstract: The spatially resolved thermoelectric power is studied on epitaxial graphene on SiC with direct correspondence to graphene atomic structures by a scanning tunneling microscopy (STM) method. A thermovoltage arises from a temperature gradient between the STM tip and the sample, and variations of thermovoltage are distinguished at defects and boundaries with atomic resolution. The epitaxial graphene has a high thermoelectric power of 42 µV/K with a big change (9.6 µV/K) at the monolayer-bilayer boundary. Long-wav… Show more

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Cited by 57 publications
(57 citation statements)
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“…The advantage of this method is the simultaneous imaging of the sample structure and thermoelectric signals with a spatial resolution of atomic‐scale. Since the Seebeck coefficient relies on the sample local density of states (LDOS) near the Fermi energy, and LDOS can be quite different in the presence of boundaries and disorders, thermoelectric imaging allows us to probe grain boundaries, wrinkles, defects, and impurities in graphene, which may not be reflected in topography images …”
Section: Thermoelectric Properties Of Graphenementioning
confidence: 99%
“…The advantage of this method is the simultaneous imaging of the sample structure and thermoelectric signals with a spatial resolution of atomic‐scale. Since the Seebeck coefficient relies on the sample local density of states (LDOS) near the Fermi energy, and LDOS can be quite different in the presence of boundaries and disorders, thermoelectric imaging allows us to probe grain boundaries, wrinkles, defects, and impurities in graphene, which may not be reflected in topography images …”
Section: Thermoelectric Properties Of Graphenementioning
confidence: 99%
“…Because Eq. (4) is an exact expression that does not involve any approximation, it can be generally applicable for other thermoelectric systems including noncontact STM setups [10,11,12]. …”
mentioning
confidence: 99%
“…Furthermore, as a result of the smooth scattering potential in the continuous top layer at the ML-BL boundary on SiC(0001) [30,44,45,47], only intravalleyscattering-induced long-wavelength Friedel oscillations can occur and intervalley-scattering-induced oscillations are absent [4,41,45]. Therefore, the energy gap considered here is opened by the long-wavelength (Q ¼ 2k F ) Friedel oscillation associated with intravalley scattering.…”
Section: Friedel Gaps In ML and Bl Graphenementioning
confidence: 92%