Atomic scale modeling of electrically doped p-i-n FET from adenine based single wall nanotube

Dey, Debarati; Roy, Provas Kumar; De, Debashis

doi:10.1016/j.jmgm.2017.06.024

Cited by 12 publications

(6 citation statements)

References 19 publications

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“…Using DFT and NEGF formalisms-based first-principle approach, nano-FET can be designed using various structural modifications. Various properties of these nano-FETs' are also observed, for example, scalability assessment, highest occupied molecular orbital-lowest unoccupied molecular orbital (HOMO-LUMO) gaps, maximum obtainable current, RF performance, linearity investigation [54][55][56][57][58][59][60][61]. Conjugated co-oligomers-based molecular diode can be designed using DFT-and NEGFbased formalisms.…”

Section: Mismatching Of Compatibility Between Foreign Atoms and Host Atoms No Probability Of Compatibility Mismatching As It Depends On Bmentioning

confidence: 99%

“…One of the most important approaches is to design and simulate analytical nanostructures. Many significant devices can be designed using this simulation procedure and analyze the obtained results [47,55,56]. According to the result, the researchers can modify the various simulation parameters as well as the different aspects of the nanoscale analytical model.…”

Section: Molecular-level Research Work Based On Electrical Dopingmentioning

confidence: 99%

“…For example, traditional semiconductor devices can be designed using biomolecules. In the case of biomolecules generally, nucleobases such as adenine, thymine, guanine and cytosine have been considered which are known as the basic building blocks of DNA [47,55]. It is very common to construct conventional inorganic semiconductor devices in the field of nanotechnology.…”

Section: Molecular-level Research Work Based On Electrical Dopingmentioning

confidence: 99%

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Electrically Doped Nanoscale Devices Using First-Principle Approach: A Comprehensive Survey

Dey

Ahmadian

et al. 2021

Nanoscale Res Lett

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Doping is the key feature in semiconductor device fabrication. Many strategies have been discovered for controlling doping in the area of semiconductor physics during the past few decades. Electrical doping is a promising strategy that is used for effective tuning of the charge populations, electronic properties, and transmission properties. This doping process reduces the risk of high temperature, contamination of foreign particles. Significant experimental and theoretical efforts are demonstrated to study the characteristics of electrical doping during the past few decades. In this article, we first briefly review the historical roadmap of electrical doping. Secondly, we will discuss electrical doping at the molecular level. Thus, we will review some experimental works at the molecular level along with we review a variety of research works that are performed based on electrical doping. Then we figure out importance of electrical doping and its importance. Furthermore, we describe the methods of electrical doping. Finally, we conclude with a brief comparative study between electrical and conventional doping methods.

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Section: Mismatching Of Compatibility Between Foreign Atoms and Host Atoms No Probability Of Compatibility Mismatching As It Depends On Bmentioning

confidence: 99%

Section: Molecular-level Research Work Based On Electrical Dopingmentioning

confidence: 99%

Section: Molecular-level Research Work Based On Electrical Dopingmentioning

confidence: 99%

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Electrically Doped Nanoscale Devices Using First-Principle Approach: A Comprehensive Survey

Dey

Ahmadian

et al. 2021

Nanoscale Res Lett

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“…The electronic charge transport properties of boron-doped graphene compound were increased visibly [31]. This impurity doping property improved electronic charge transfer characteristics in nano-scale molecular device designing by introducing enhanced quantum-ballistic transmission [32]. Bio-molecular p-i-n FET has been designed from adenine nanotube using electrical doping procedure [32].…”

Section: Introductionmentioning

confidence: 99%

“…This impurity doping property improved electronic charge transfer characteristics in nano‐scale molecular device designing by introducing enhanced quantum‐ballistic transmission [32]. Bio‐molecular p‐i‐n FET has been designed from adenine nanotube using electrical doping procedure [32]. Fundamental logic gate properties were shown by current–voltage characteristics and resistivity of the single‐strand DNA (ssDNA) conjugated with various materials [1, 33].…”

Section: Introductionmentioning

confidence: 99%

First principle approach towards logic design using hydrogen‐doped single‐strand DNA

Roy

Dey

2018

IET nanobiotechnol.

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Molecular logic gate has been proposed using single-strand DNA (ssDNA) consisting of basic four nucleobases. In this study, density functional theory and non-equilibrium Green's function based first principle approach is applied to investigate the electronic transmission characteristics of ssDNA chain. The heavily hydrogen-doped-ssDNA (H-ssDNA) chain is connected with gold electrode to achieve enhanced quantum-ballistic transmission along 1 1 1 direction. Logic gates OR, Ex-OR, NXOR have been implemented using this analytical model of H-ssDNA device. Enhanced logic properties have been observed for ssDNA after H adsorption due to improved electronic transmission. Dense electron cloud is considered as logic 'high' (1) output in presence of hydrogen molecule and on the contrary sparse cloud indicate logic 'low' (0) in the absence of hydrogen molecule. Device current is significantly increased from 0.2 nA to 2.4 µA (approx.) when ssDNA chain is heavily doped with hydrogen molecule. The current-voltage characteristics confirm the formation of various Boolean logic gate operations.

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Electrically Doped Nano Devices: A First Principle Paradigm

Roy,

2024

Advanced Nanoscale MOSFET Architectures

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Atomic scale modeling of electrically doped p-i-n FET from adenine based single wall nanotube

Cited by 12 publications

References 19 publications

Electrically Doped Nanoscale Devices Using First-Principle Approach: A Comprehensive Survey

Electrically Doped Nanoscale Devices Using First-Principle Approach: A Comprehensive Survey

First principle approach towards logic design using hydrogen‐doped single‐strand DNA

Electrically Doped Nano Devices: A First Principle Paradigm

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